In this paper, we report aqueous solution-processed boron-doped gallium oxide dielectric thin films for high-performance oxide thin-film transistors. The role of B incorporation on the microstructural, chemical, optical, and dielectric characteristics of Ga₂O₃ is comprehensively investigated. The combined results show that suitable B addition could effectively suppress oxygen vacancy related defects and densify the Ga₂O₃ film, thereby effectively reducing the leakage current and enhancing the dielectric properties of Ga₂O_3. Compared with pristine Ga₂O₃-gated TFTs, the In₂O₃/GaBO (10 at% B) TFTs have a significant improvement in devices performance, including the mobility increasing from 10 to 17 cm²/(V s) and the on–off current ratio improving from 2.5 × 10⁵ to 1.3 × 10⁶. Our study represents an important step toward the development of next generation large-area advanced optoelectronics.

中文翻译：

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水溶液处理硼掺杂的氧化镓电介质，用于高性能薄膜晶体管

在本文中，我们报道了用于高性能氧化物薄膜晶体管的水溶液处理硼掺杂氧化镓介电薄膜。全面研究了硼掺入对Ga ₂ O ₃的微观结构，化学，光学和介电特性的影响。将合并的结果表明，适当添加B可以有效地抑制氧空位相关的缺陷和致密化镓₂ Ó ₃膜，从而有效地降低漏电流并增强Ga构成的介电性能₂ ö ₃相比具有原始镓₂ ö ₃门控TFT，In ₂ O ₃/ GaBO（10 at％B）TFT在器件性能方面有显着改善，包括迁移率从10 cm ² /（V s）提高到-导通电流比从2.5×10 ⁵改善到1.3×10 ⁶。我们的研究代表了下一代大面积先进光电技术发展的重要一步。