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A gate-tunable symmetric bipolar junction transistor fabricated via femtosecond laser processing
Nanoscale Advances ( IF 4.6 ) Pub Date : 2020-03-18 , DOI: 10.1039/d0na00201a
Bao-Wang Su 1 , Bin-Wei Yao 2 , Xi-Lin Zhang 1 , Kai-Xuan Huang 1 , De-Kang Li 1 , Hao-Wei Guo 1 , Xiao-Kuan Li 1 , Xu-Dong Chen 2 , Zhi-Bo Liu 1, 3, 4 , Jian-Guo Tian 1, 3, 4
Affiliation  

Two-dimensional (2D) bipolar junction transistors (BJTs) with van der Waals heterostructures play an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT), constructed from black phosphorus and MoS2, with femtosecond laser processing. This SBJT exhibits good bidirectional current amplification owing to its symmetric structure. We placed a top gate on one side of the SBJT to change the difference in the major carrier concentration between the emitter and collector in order to further investigate the effects of electrostatic doping on the device performance. The SBJT can also act as a gate-tunable phototransistor with good photodetectivity and photocurrent gain of β = ∼21. Scanning photocurrent images were used to determine the mechanism governing photocurrent amplification in the phototransistor. These results promote the development of the applications of multifunctional nanoelectronics based on 2D materials.

中文翻译:

通过飞秒激光加工制造的栅极可调对称双极结晶体管

具有范德华异质结构的二维 (2D) 双极结晶体管 (BJT) 在未来纳米电子学的发展中发挥着重要作用。本文介绍了一种利用飞秒激光加工制造由黑磷和MoS 2构成的对称双极结晶体管(SBJT)的简便方法。由于其对称结构,这种 SBJT 表现出良好的双向电流放大。我们在 SBJT 的一侧放置了一个顶栅,以改变发射极和集电极之间主要载流子浓度的差异,以进一步研究静电掺杂对器件性能的影响。SBJT 还可以用作栅极可调光电晶体管,具有良好的光电探测能力和β的光电流增益=~21。扫描光电流图像用于确定控制光电晶体管中光电流放大的机制。这些成果促进了基于二维材料的多功能纳米电子学应用的发展。
更新日期:2020-04-24
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