Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Fabrication of Keggin-type Polyoxometalate Membranes at the Gas–Liquid Interface
Langmuir ( IF 3.7 ) Pub Date : 2020-04-01 , DOI: 10.1021/acs.langmuir.9b03965 Norihito Hiyoshi 1
Langmuir ( IF 3.7 ) Pub Date : 2020-04-01 , DOI: 10.1021/acs.langmuir.9b03965 Norihito Hiyoshi 1
Affiliation
|
Keggin-type polyoxometalates are effective catalytic materials for acid-catalyzed reactions and oxidation reactions. In this paper, we describe the fabrication of a porous membrane of Keggin-type polyoxometalates at the gas–liquid interface and the structural characterization of the membrane via aberration-corrected scanning transmission electron microscopy. The membrane is formed by the introduction of n-octylamine vapor into aqueous solution of Keggin-type silicotungstic acid (H4SiW12O40) and cesium chloride. The membrane obtained has the cubic structure of cesium salts of silicotungstic acid (CsxH4–xSiW12O40), exposing the (110) crystal plane preferentially. The single-unit cell layer of the upper surface of the membrane is densely packed with Keggin anions, while the lower layers are rich in vacancies at both the anion and cation sites. This structure results from the fast formation of the single-unit cell layer at the surface of the solution and slow stacking of Keggin anions under the layer.
中文翻译：
气液界面处的Keggin型多金属氧酸盐膜的制备
Keggin型多金属氧酸盐是用于酸催化反应和氧化反应的有效催化材料。在本文中，我们描述了在气液界面处的Keggin型多金属氧酸盐多孔膜的制备以及通过像差校正的扫描透射电子显微镜对该膜的结构表征。通过将正辛胺蒸气引入Keggin型硅钨酸（H 4 SiW 12 O 40）和氯化铯的水溶液中来形成膜。获得的膜具有硅钨酸铯盐的立方结构（Cs x H 4– x SiW 12 O 40），优先曝光（110）晶面。膜上表面的单晶细胞层密布有Keggin阴离子，而下层在阴离子和阳离子位点均富含空位。这种结构是由于在溶液表面快速形成单晶细胞层和在该层下缓慢堆叠Keggin阴离子所致。
更新日期：2020-04-01
中文翻译：
气液界面处的Keggin型多金属氧酸盐膜的制备
Keggin型多金属氧酸盐是用于酸催化反应和氧化反应的有效催化材料。在本文中，我们描述了在气液界面处的Keggin型多金属氧酸盐多孔膜的制备以及通过像差校正的扫描透射电子显微镜对该膜的结构表征。通过将正辛胺蒸气引入Keggin型硅钨酸（H 4 SiW 12 O 40）和氯化铯的水溶液中来形成膜。获得的膜具有硅钨酸铯盐的立方结构（Cs x H 4– x SiW 12 O 40），优先曝光（110）晶面。膜上表面的单晶细胞层密布有Keggin阴离子，而下层在阴离子和阳离子位点均富含空位。这种结构是由于在溶液表面快速形成单晶细胞层和在该层下缓慢堆叠Keggin阴离子所致。
京公网安备 11010802027423号