Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers,Faraday Discussions

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Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers
Faraday Discussions ( IF 3.3 ) Pub Date : 2020-3-16 , DOI: 10.1039/d0fd00007h
Maciej R. Molas _{1,

2,

3,

4,

5} , Anastasia V. Tyurnina _{6,

7,

7,

8,

9} , Viktor Zólyomi _{6,

7,

7,

8,

9} , Anna K. Ott _{8,

10,

11,

12} , Daniel J. Terry _{6,

7,

7,

8,

9} , Matthew J. Hamer _{6,

7,

7,

8,

9} , Celal Yelgel _{7,

8,

9,

13} , Adam Babiński _{1,

2,

3,

4,

5} , Albert G. Nasibulin _{14,

15,

16} , Andrea C. Ferrari _{8,

10,

11,

12} , Vladimir I. Fal’ko _{6,

7,

7,

8,

9} , Roman Gorbachev _{6,

7,

7,

8,

9}

Affiliation

III–VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak positions as a function of N, consistent with first principles calculations.

中文翻译：

GaSe和InSe过渡金属硫属化物层的拉曼光谱

III–VI过渡金属硫族化物（InSe和GaSe）是一类新型的层状半导体，其带隙的尺寸和带隙类型随层数（N）的变化很大。在这里，我们使用拉曼光谱技术研究了InSe和GaSe的剥落层，从块状晶体到单层，囊括在六方氮化硼中。我们介绍了每个原子层内两个层内振动以及层间剪切和层呼吸模式的N依赖性。线性链模型可用于描述峰位随N的变化，这与第一个原理计算一致。

更新日期：2020-03-16

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