Due to the presence of parasitic elements in switching devices and circuit realization, crosstalk phenomenon in bridge-leg configurations is unavoidable. A passive resonant level shifter that can suppress the effect of the crosstalk and deliver a low off-state gate-source voltage to reduce the forward voltage drop of the body diode of SiC mosfets is presented. The circuit is composed of two parts. The first one is a resistor-capacitor-diode (RCD) level shifter that delivers a static negative off-state gate-source voltage to the mosfets. The voltage level is designed to be close to zero, so that the forward voltage drop of the body diode is lowered. The second one is a series resonant tank circuit. It generates short voltage pulses to counteract the voltage pulses caused by the crosstalk. The gate-source voltage can then be maintained at a level below the threshold voltage of the mosfets. The proposed level shifter does not require any active devices or additional supply. It can be applied readily to commercially available gate drivers. A passive resonant level shifter module for four SiC mosfets in a 1-kW H-bridge inverter has been built and evaluated. Detailed performance comparison with the RCD level shifter will be given.

中文翻译：

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用于抑制串扰效应和减少桥臂中 SiC MOSFET 体二极管损耗的无源谐振电平转换器

由于开关器件和电路实现中寄生元件的存在，桥腿配置中的串扰现象是不可避免的。提出了一种无源谐振电平转换器，它可以抑制串扰的影响并提供低关态栅源电压，以降低 SiC mosfet 体二极管的正向压降。电路由两部分组成。第一个是电阻-电容-二极管 (RCD) 电平转换器，它向 mosfet 提供静态负关断状态栅源电压。电压电平设计为接近于零，从而降低体二极管的正向压降。第二个是串联谐振回路。它产生短电压脉冲以抵消由串扰引起的电压脉冲。然后可以将栅源电压保持在低于 mosfet 阈值电压的水平。建议的电平转换器不需要任何有源器件或额外的电源。它可以很容易地应用于市售的栅极驱动器。已经构建并评估了用于 1 kW H 桥逆变器中的四个 SiC mosfet 的无源谐振电平转换器模块。将给出与 RCD 电平转换器的详细性能比较。