Abstract

Increasing the open circuit voltage of organic/Si-based hetero-junction solar cells (HSCs) is an efficient path for improving its photoelectric conversion efficiency (PCE). Commonly, increasing the doping concentration (N_D) for silicon planar substrate could enhance the open circuit voltage (V_oc). Comparing with other groups used 10¹⁵ cm⁻³ and other various doping level, the selected 10¹⁷ cm⁻³ doping concentration, as the ideal doping level, could enhance 100 mV for V_oc and maximum increase the PCE up to 12.54% without any additional antireflection (AR) layer deposition. To our knowledge, this obtained V_oc of 620 mV is a prominent reported value for n-Si/PEDOT: PSS solar devices without any additional antireflection (AR) layer deposition. Meanwhile, this research work clarifies that the PCE is inconsistently increased with the doping concentration, and 10¹⁸ cm⁻³ or higher doping concentration would import internal defects and reduce the PEC. This investigation of silicon wafer’s optimal doping level paves a utility way for easily enhancing the efficiency of industrialized Si/PEDOT: PSS solar cells with low-cost fabrication technologies.

中文翻译：

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单结混合n -Si / PEDOT的硅晶片的理想掺杂浓度：具有3.2％的PCE和620 mV的V oc的PSS太阳能电池

摘要

增加有机/硅基异质结太阳能电池（HSC）的开路电压是提高其光电转换效率（PCE）的有效途径。通常，增加硅平面基板的掺杂浓度（N _D）可以提高开路电压（V _oc）。与其他使用10 ¹⁵  cm ^-3和其他各种掺杂水平的组相比，所选的10 ¹⁷  cm ^-3掺杂浓度作为理想的掺杂水平可以提高V _oc的100 mV，并最大程度地提高PCE高达12.54％，而无任何掺杂额外的抗反射（AR）层沉积。据我们所知，这获得了V620 mV的_oc是n -Si / PEDOT：PSS太阳能器件的显着报告值，没有任何额外的抗反射（AR）层沉积。同时，该研究工作阐明，PCE随掺杂浓度不一致地增加，并且10 ¹⁸  cm ^-3或更高的掺杂浓度会引入内部缺陷并降低PEC。这项对硅晶片最佳掺杂水平的研究为利用低成本制造技术轻松提高工业化Si / PEDOT：PSS太阳能电池的效率提供了一条实用途径。