Abstract

A-site doping of BaBi₂NbTaO₉ by Ni²⁺ was synthesized by chemical precursor solution decomposition method. The materials exhibited single-phase tetragonal structure. The crystallite size of the calcined powder exhibited 42 nm with high degree of tetragonality. Curie temperature (T_c) was not found upto 600 °C that indicated higher T_c of the material. Impedance spectroscopy showed non-Debye type of relaxation with semiconducting nature. The closeness of the activation energy for imaginary impedance relaxation and DC conductivity indicated same type of charge carriers. P–E hysteresis loop indicated ferroelectric properties of the material. Energy storage densities were calculated for charge and discharge. The highest energy efficiency was observed at 10 kV/cm electric field.

中文翻译：

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化学路线制备的无铅过渡金属掺杂BaBi 2（NbTa）O 9纳米陶瓷的电和储能性能观察

摘要

通过化学前驱体溶液分解法合成了Ni ²⁺对BaBi ₂ NbTaO ₉的A位掺杂。该材料表现出单相四方结构。煅烧粉末的微晶尺寸显示为42nm，具有高度的四方性。直到600°C都没有发现居里温度（T _c），这表明更高的T _c材料。阻抗谱显示具有半导体性质的非德拜弛豫类型。虚构阻抗松弛和直流电导率的活化能的接近性表明相同类型的电荷载体。P–E磁滞回线表示材料的铁电特性。计算充电​​和放电的储能密度。在10 kV / cm电场下观察到最高的能量效率。