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Effects of background gases and pressure in pulsed laser deposition of Al-doped ZnO
Thin Solid Films ( IF 2.0 ) Pub Date : 2020-05-01 , DOI: 10.1016/j.tsf.2020.137953
Reeson KEK , Seong Ling YAP , Song Foo KOH , Chen Hon NEE , Teck Yong TOU , Seong Shan YAP

Abstract Background gases (O2, He or Ar) with the pressure from ~ 10−3 Pa to 133.3 Pa are used in 355 nm laser deposition of Al-doped ZnO at room temperature. The effects of these gases and pressure on plasma formation are studied by optical emission spectroscopy (OES) and time of flight (TOF) measurement. The OES results show that the emission intensity of the species in O2 and Ar decrease slightly and then increase exponentially above ~ 5 Pa. The emission intensity in Ar is the highest, followed by emission in O2 whilst the emission in He is low and weakly depend on background gas pressure. TOF measurements indicate that the ion velocity decrease with increasing O2 and Ar pressure at about 5–10 Pa. The ion velocity is highest in He while the ion velocities in O2 and Ar are similar. Thin-film samples deposited in different gas at 2.6 Pa are amorphous, but those deposited at 133.3 Pa are crystalline and exhibit different morphologies and optical properties depending on type of gas. Samples deposited in O2 are highly transparent but those deposited in He and Ar contain nano and micron-sized structures with

中文翻译:

背景气体和压力对掺铝氧化锌脉冲激光沉积的影响

摘要 背景气体(O2、He 或 Ar)的压力从 ~ 10−3 Pa 到 133.3 Pa,用于室温下 355 nm 激光沉积 Al 掺杂的 ZnO。通过光发射光谱 (OES) 和飞行时间 (TOF) 测量来研究这些气体和压力对等离子体形成的影响。OES结果表明,O2和Ar中物质的发射强度在~5Pa以上略有下降,然后呈指数增加。Ar中发射强度最高,O2中发射次之,He中发射低且依赖弱背景气体压力。TOF 测量表明离子速度随着 O2 和 Ar 压力的增加而降低,大约为 5-10 Pa。He 中的离子速度最高,而 O2 和 Ar 中的离子速度相似。薄膜样品沉积在不同的气体中 2。6 Pa 是无定形的,但在 133.3 Pa 沉积的那些是结晶的,并且根据气体类型表现出不同的形态和光学特性。沉积在 O2 中的样品是高度透明的,但沉积在 He 和 Ar 中的样品含有纳米和微米尺寸的结构
更新日期:2020-05-01
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