Two dimensional (2D) hexagonal-shape gallium nitride (HS-GaN) was synthesized by reacting GaCl₃ and LiNH₂ with LiCl as the molten salt. We demonstrated that the size and shape of 2D plate-like GaN nanoplates could be controlled under a relatively low temperature from 600 °C to 700 °C. TEM analysis revealed that the single crystal of HS-GaN has a plate-like morphology with diameter and thickness of 450 nm and 80 nm, respectively. The photo-electrochemical cell fabricated using the HS-GaN electrode showed a higher current by a factor of up to 2 compared to that using random-shaped GaN particles under UV light irradiation. The precise growth control of 2D GaN crystals will facilitate new methods of developing high-performance photo-energy conversion materials.

通过使GaCl ₃和LiNH ₂与作为熔融盐的LiCl反应，可以合成二维（2D）六边形氮化镓（HS-GaN）。我们证明了2D板状GaN纳米板的尺寸和形状可以在600°C至700°C的相对较低的温度下进行控制。TEM分析表明，HS-GaN单晶具有板状形态，直径和厚度分别为450nm和80nm。与在紫外线照射下使用随机形状的GaN颗粒相比，使用HS-GaN电极制造的光电化学电池显示的电流最多高2倍。二维GaN晶体的精确生长控制将促进开发高性能光能转换材料的新方法。