Abstract Combinatorial thin film deposition from vapor phase combined with photolithography was involved in preparation of bidimensional wires for electromigration testing along Al-Cu, Al-Sm and Cu-Sm thin film libraries. Samarium was chosen as alloying element due to its larger atomic radius, directly impacting the crystallographic properties of the conducting alloy and decreasing the total grain boundary surface through amorphisation. As reference, pure Al and Cu wires were additionally deposited and studied. Empirical estimation of the experimental errors obtained during electromigration testing was performed by high throughput measurements and a value around 2% was found for pure Al and Cu metals. The resistance against electromigration of test wires was increased by electrochemical passivation (leading to void pinning), while the empirically evaluated experimental errors increased to 30%. Electrical screening of Al and Cu-based thin film combinatorial libraries was performed at extremely high current densities (MA cm−2). In the Al-Cu system, Al–14 at.% Cu was identified as the alloy able to withstand the highest power density of 2.10 MW cm−2 before failure. The Al-Sm and Cu-Sm thin film libraries showed compositional regions of total or partial amorphization likely impacting the electromigration resistance of the alloys. Electrical screening indicated that Al-6 at.% Sm is the alloy withstanding the highest power density before failure with a value of 2.48 MW cm−2. The highest current densities before electrical failure in conducting lines were measured on pure Al at 1.39 MA cm−2, with a value of maximum power density below 2.62 MW cm−2. Careful discrimination between these two variables is necessary before choosing one of the studied materials as ideal for specific applications.

中文翻译：

---

钐对铝和铜组合薄膜合金中电流感应原子位移的影响

摘要 气相结合光刻的组合薄膜沉积用于制备用于沿 Al-Cu、Al-Sm 和 Cu-Sm 薄膜库进行电迁移测试的二维导线。钐被选为合金元素，因为它的原子半径较大，直接影响导电合金的结晶性能，并通过非晶化降低总晶界表面。作为参考，另外沉积和研究了纯铝和铜线。通过高通量测量对电迁移测试期间获得的实验误差进行经验估计，发现纯铝和铜金属的值约为 2%。通过电化学钝化（导致空隙钉扎）增加了测试线的抗电迁移能力，而经验评估的实验误差增加到 30%。以极高的电流密度 (MA cm-2) 对基于铝和铜的薄膜组合库进行电筛选。在 Al-Cu 系统中，Al-14 at.% Cu 被确定为能够在失效前承受 2.10 MW cm-2 的最高功率密度的合金。Al-Sm 和 Cu-Sm 薄膜库显示全部或部分非晶化的组成区域可能影响合金的抗电迁移性。电学筛选表明，Al-6 at.% Sm 是在失效前能够承受最高功率密度的合金，其值为 2.48 MW cm-2。导线电气故障前的最高电流密度是在 1.39 MA cm-2 的纯铝上测量的，最大功率密度值低于 2.62 MW cm-2。