Abstract We investigate effects of bottom electrodes on ZrO2 thin films formed through atomic layer deposition (ALD). We focus on the correlation between interfacial layer formation and electrical properties. For this comparative study, two different bottom electrodes consisting of TiN and Ru were employed. ALD ZrO2 films are deposited on these bottom electrodes by using tris(dimethylamino)cyclopentadielnyl zirconium ((C5H5)Zr[N(CH3)2]3) and ozone as a precursor and oxidant, respectively. Based on detailed investigations using transmission electron microscopy and X-ray photoelectron spectroscopy, we are able to comparatively characterize the formations and chemical compositions of the interfacial layers between ALD ZrO2 and both bottom electrodes. Based on the electrical properties of metal-insulator-metal capacitors fabricated using both the TiN and Ru bottom electrodes, we observe improved capacitance-voltage and current-voltage characteristics with the Ru bottom electrode, which are attributed to the suppressed formation of an interfacial layer. We also discuss the correlation between traps in the interfacial layer and electrical properties.

中文翻译：

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具有 Ru 底部电极的原子层沉积 ZrO2 金属-绝缘体-金属电容器的界面质量改善

摘要 我们研究了底部电极对通过原子层沉积 (ALD) 形成的 ZrO2 薄膜的影响。我们专注于界面层形成与电性能之间的相关性。在这项比较研究中，采用了由 TiN 和 Ru 组成的两种不同的底部电极。通过使用三（二甲氨基）环戊二烯基锆（(C5H5)Zr[N(CH3)2]3）和臭氧分别作为前体和氧化剂，在这些底部电极上沉​​积 ALD ZrO2 薄膜。基于使用透射电子显微镜和 X 射线光电子能谱的详细研究，我们能够比较表征 ALD ZrO2 和两个底部电极之间界面层的形成和化学成分。基于使用 TiN 和 Ru 底部电极制造的金属-绝缘体-金属电容器的电气特性，我们观察到 Ru 底部电极的电容-电压和电流-电压特性得到改善，这归因于界面层的抑制形成. 我们还讨论了界面层中的陷阱与电特性之间的相关性。