Formation of SiP2 Nanocrystals Embedded in SiO2 from Phosphorus-Rich SiO1.5 Thin Films,The Journal of Physical Chemistry C

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Formation of SiP2 Nanocrystals Embedded in SiO2 from Phosphorus-Rich SiO1.5 Thin Films
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2020-03-26 , DOI: 10.1021/acs.jpcc.9b11416
S. Geiskopf ₁ , M. Stoffel ₁ , X. Devaux ₁ , E. André ₂ , C. Carteret ₂ , A. Bouché ₁ , M. Vergnat ₁ , H. Rinnert ₁

Affiliation

We investigate the structural, vibrational, and optical properties of phosphorus-rich SiO_1.5 thin films annealed at 1100 °C. For phosphorus (P) contents larger than 3 atom %, high-resolution transmission electron microscopy characterizations reveal the presence of both spherical-shaped SiP₂ nanoparticles crystallizing in an orthorhombic structure and bumps in epitaxy with the underlying Si substrate. Energy-dispersive spectroscopy measurements confirm the SiP₂ stoichiometry. Moreover, electron energy loss spectroscopy characterizations allow us to determine the exact location of P and Si atoms. Apart from SiP₂ nanoparticles, P atoms are found to be located in the bumps and in the Si substrate to a level of 1 atom %, which is explained by P diffusion during annealing. The vibrational properties determined by Raman spectroscopy are found to be in excellent agreement with density functional theory calculations of the vibration modes for the SiP₂ alloy. Finally, the quenching of photoluminescence with an increasing P content is explained on the basis of structural data.

中文翻译：

富含磷的SiO _1.5薄膜在SiO _2中嵌入SiP ₂纳米晶体的形成

我们研究了在1100°C退火的富磷SiO _1.5薄膜的结构，振动和光学性质。对于大于3原子％的磷（P）含量，高分辨率透射电子显微镜表征显示，存在以正交晶体结构结晶的球形SiP ₂纳米颗粒，以及与下面的Si衬底在外延中凸起的情况。能量色散光谱学测量证实了SiP ₂化学计量。此外，电子能量损失光谱学表征使我们能够确定P和Si原子的确切位置。除了SiP ₂在纳米粒子中，发现P原子位于凸块和硅衬底中的含量为1原子％，这可以通过退火过程中的P扩散来解释。发现通过拉曼光谱法测定的振动性质与SiP ₂合金的振动模式的密度泛函理论计算非常一致。最后，根据结构数据解释了随着P含量增加而猝灭的光致发光。

更新日期：2020-03-27

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