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Bi3+ -Er3+ and Bi3+ -Yb3+ Codoped Cs2 AgInCl6 Double Perovskite Near-Infrared Emitters.
Angewandte Chemie International Edition ( IF 16.1 ) Pub Date : 2020-03-13 , DOI: 10.1002/anie.202002721 Habibul Arfin 1 , Jagjit Kaur 2 , Tariq Sheikh 1 , Sudip Chakraborty 2 , Angshuman Nag 1
Angewandte Chemie International Edition ( IF 16.1 ) Pub Date : 2020-03-13 , DOI: 10.1002/anie.202002721 Habibul Arfin 1 , Jagjit Kaur 2 , Tariq Sheikh 1 , Sudip Chakraborty 2 , Angshuman Nag 1
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Bi3+ and lanthanide ions have been codoped in metal oxides as optical sensitizers and emitters. But such codoping is not known in typical semiconductors such as Si, GaAs, and CdSe. Metal halide perovskite with coordination number 6 provides an opportunity to codope Bi3+ and lanthanide ions. Codoping of Bi3+ and Ln3+ (Ln=Er and Yb) in Cs2AgInCl6 double perovskite is presented. Bi3+‐Er3+ codoped Cs2AgInCl6 shows Er3+ f‐electron emission at 1540 nm (suitable for low‐loss optical communication). Bi3+ codoping decreases the excitation (absorption) energy, such that the samples can be excited with ca. 370 nm light. At that excitation, Bi3+‐Er3+ codoped Cs2AgInCl6 shows ca. 45 times higher emission intensity compared to the Er3+ doped Cs2AgInCl6. Similar results are also observed in Bi3+‐Yb3+ codoped sample emitting at 994 nm. A combination of temperature‐dependent (5.7 K to 423 K) photoluminescence and calculations is used to understand the optical sensitization and emission processes.
中文翻译：
Bi3 + -Er3 +和Bi3 + -Yb3 +共掺杂的Cs2 AgInCl6双钙钛矿近红外发射体。
Bi 3+和镧系元素离子已共掺杂在金属氧化物中作为光敏剂和发射体。但是这种共掺杂在诸如Si，GaAs和CdSe的典型半导体中是未知的。配位数为6的金属卤化物钙钛矿提供了掺杂Bi 3+和镧系元素离子的机会。提出了Bi 3+和Ln 3+（Ln = Er和Yb）在Cs 2 AgInCl 6双钙钛矿中的共掺杂。Bi 3+ -Er 3+共掺杂的Cs 2 AgInCl 6在1540 nm处显示Er 3+ f-电子发射（适用于低损耗光通信）。Bi 3+共掺杂降低了激发（吸收）能，因此样品可以用约。370 nm的光。在该激发下，Bi 3+ -Er 3+共掺杂的Cs 2 AgInCl 6的Ca约为。发光强度是掺Er 3+的Cs 2 AgInCl 6的45倍。在994 nm处发射的Bi 3+ -Yb 3+共掺杂样品中也观察到了相似的结果。结合温度依赖性（5.7 K至423 K）的光致发光和计算来理解光敏和发射过程。
更新日期：2020-03-13
中文翻译：
Bi3 + -Er3 +和Bi3 + -Yb3 +共掺杂的Cs2 AgInCl6双钙钛矿近红外发射体。
Bi 3+和镧系元素离子已共掺杂在金属氧化物中作为光敏剂和发射体。但是这种共掺杂在诸如Si，GaAs和CdSe的典型半导体中是未知的。配位数为6的金属卤化物钙钛矿提供了掺杂Bi 3+和镧系元素离子的机会。提出了Bi 3+和Ln 3+（Ln = Er和Yb）在Cs 2 AgInCl 6双钙钛矿中的共掺杂。Bi 3+ -Er 3+共掺杂的Cs 2 AgInCl 6在1540 nm处显示Er 3+ f-电子发射（适用于低损耗光通信）。Bi 3+共掺杂降低了激发（吸收）能，因此样品可以用约。370 nm的光。在该激发下，Bi 3+ -Er 3+共掺杂的Cs 2 AgInCl 6的Ca约为。发光强度是掺Er 3+的Cs 2 AgInCl 6的45倍。在994 nm处发射的Bi 3+ -Yb 3+共掺杂样品中也观察到了相似的结果。结合温度依赖性（5.7 K至423 K）的光致发光和计算来理解光敏和发射过程。
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