Owing to the high-frequency and high-power requirements for communication integrated circuits (ICs) in today's rapid development of electronic technology, the intensity of electromagnetic field from the ICs can be significant. This article shows a failure due to this enhanced electromagnetic field in a gallium nitride based high electron mobility transistor high-frequency power amplifier. Inputs were provided as per the rated values and failures are observed on the drain and gate terminals. Detail failure analysis on the failed samples, using focus ion beam technique for cross sectioning the damaged area and examining under scanning electron microscopy/ energy dispersive X-ray spectroscopy, reveals the meltdown of the materials at the drain and gate terminals. Electromagnetic simulations and measurements are performed, and the failure mechanism is confirmed to be due to the magnetic field induced eddy current in the drain metal plate of the transistor, on top of the designed operating current in the metal plate.

中文翻译：

---

GaN-HEMT 高频功率放大器中的电磁感应故障


在电子技术飞速发展的今天，由于通信集成电路(IC)的高频、大功率的要求，IC产生的电磁场强度非常大。本文展示了氮化镓基高电子迁移率晶体管高频功率放大器中由于电磁场增强而导致的故障。根据额定值提供输入，并在漏极和栅极端子上观察到故障。使用聚焦离子束技术对受损区域进行横截面并在扫描电子显微镜/能量色散 X 射线光谱下进行检查，对失效样品进行详细失效分析，揭示了漏极和栅极端子处材料的熔化。进行了电磁模拟和测量，并确认故障机制是由于晶体管漏极金属板中的磁场感应涡流以及金属板中设计的工作电流造成的。