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Dual-Band Frequency Selective Surface Based on Shunted SIW Cavity Technology
IEEE Microwave and Wireless Components Letters ( IF 2.9 ) Pub Date : 2020-03-01 , DOI: 10.1109/lmwc.2020.2968767
Varikuntla Krushna Kanth , Singaravelu Raghavan

The design of a hybrid frequency selective surface (FSS) is presented based on the substrate integrated waveguide cavity (SIWC) technology. The intended design combines two FSS slots (multiapertures) based on the SIWC by sharing the adjacent vias of the unit cell to exhibit unique features in terms of their cavity designs and performance. The design consists of a circular slot with a circular cavity (named as Cavity-A) and a cross slot with a shared cavity with an adjacent unit cell (named as Cavity-B). As a result, the structure shows the dual-bandpass response with sharp roll-off performance characteristics. One band possesses narrowband characteristics at 8.12 GHz. Whereas, the next band with wide bandpass characteristics from 9.5 to 11.5 GHz. Further, the structure has shown a very low insertion loss (IL) of better than 0.15 dB in its operating bands. For proving the concept, a physical prototype has been fabricated, and its functionality verified. A good agreement has been found between the estimated and experimental results.

中文翻译:

基于分流SIW腔技术的双频选频面

提出了基于衬底集成波导腔 (SIWC) 技术的混合频率选择表面 (FSS) 的设计。预期设计通过共享单元单元的相邻通孔来组合基于 SIWC 的两个 FSS 槽(多孔径),以在腔体设计和性能方面展示独特的功能。该设计由一个带有圆形腔的圆形槽(命名为 Cavity-A)和一个带有共享腔的交叉槽和相邻的晶胞(命名为 Cavity-B)组成。结果,该结构显示出具有急剧滚降性能特征的双带通响应。一个频段在 8.12 GHz 具有窄带特性。而下一个具有 9.5 至 11.5 GHz 宽带通特性的频段。此外,该结构显示出非常低的插入损耗 (IL),优于 0。其工作频段为 15 dB。为了证明这个概念,已经制造了一个物理原型,并验证了它的功能。在估计和实验结果之间发现了很好的一致性。
更新日期:2020-03-01
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