We investigated how the performance and reliability of AlGaInP-based red (620 nm) micro-light-emitting diodes (micro-LEDs) ( $25\times 17\,\,\mu \text{m}^{2}$ ) were influenced by the use of $n$ -AlInP ohmic layer and distributed Bragg reflector (DBR). The AlGaAs-based DBR showed reflectivity of 94.9% at 622 nm with a 14 nm-stopband width. The micro-LEDs with $n$ -GaAs gave slightly lower forward voltages by 0.013 – 0.021 V than those with $n$ -Al_0.5In_0.5P/ $n$ -Al_0.6Ga_0.4As and $n$ -Al_0.5In_0.5P/DBR. However, the micro-LEDs with $n$ -Al_0.5In_0.5P/ $n$ -Al_0.6Ga_0.4As and $n$ -Al_0.5In_0.5P/DBR gave 61% and 125% higher light output power at $20~\mu \text{A}$ compared with that with $n$ -GaAs. It was shown that after annealing at 120 °C for 2,000 h, the forward voltage and the light output power at 4.7 A/cm² of the micro-LEDs with $n$ -Al_0.5In_0.5P/DBR were degraded by 0.09% and 6.33%, respectively, with reference to those before annealing.

中文翻译：

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使用分布式布拉格反射器改善基于 AlGaInP 的微型发光二极管的光输出

我们研究了基于 AlGaInP 的红色 (620 nm) 微型发光二极管 (micro-LED) 的性能和可靠性（ $25\times 17\,\,\mu \text{m}^{2}$ ) 受到使用的影响 $n$ -AlInP 欧姆层和分布式布拉格反射器 (DBR)。基于 AlGaAs 的 DBR 在 622 nm 处的反射率为 94.9%，阻带宽度为 14 nm。Micro-LED 具有 $n$ -GaAs 的正向电压比那些具有 0.013 – 0.021 V 的正向电压略低 $n$ -Al _0.5 In _0.5 P/ $n$ -Al _0.6 Ga _0.4 As 和 $n$ -Al _0.5 In _0.5 P/DBR。然而，具有 $n$ -Al _0.5 In _0.5 P/ $n$ -Al _0.6 Ga _0.4 As 和 $n$ -Al _0.5 In _0.5 P/DBR 的光输出功率分别提高了 61% 和 125% $20~\mu \text{A}$ 与 $n$ -GaAs。结果表明，在 120 °C 下退火 2,000 小时后，具有 4.7 A/cm ²的 micro-LED的正向电压和光输出功率为 $n$ -Al _0.5 In _0.5 P/DBR 与退火前相比分别降低了 0.09% 和 6.33%。