Abstract The material system (Hg,Cd)Te is a prototype system for topological insulators and Dirac semi-metals. Molecular beam epitaxy is the preferred method for the growth of (Hg,Cd)Te epilayer heterostructures and CdTe-HgTe core-shell nanowires. Unfortunately, the high crystalline quality desired for charge transport investigations is only achieved for a very narrow window of the growth temperature. Additionally, the low growth temperature requires a special thermometry. Here, we demonstrate the improvement of the growth of (Hg,Cd)Te epilayer heterostructures and CdTe nanowires by the use of band edge thermometry. We show that even for narrow-gap materials band edge thermometry provides a suitable method to control the temperature directly at the growth front with a high precision and reproducibility, in contrast to a conventionally used thermocouple.

中文翻译：

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(Hg,Cd)Te 基材料 MBE 生长的带边温度测量

摘要 材料系统(Hg,Cd)Te 是拓扑绝缘体和狄拉克半金属的原型系统。分子束外延是 (Hg,Cd)Te 外延层异质结构和 CdTe-HgTe 核壳纳米线生长的首选方法。不幸的是，电荷传输研究所需的高结晶质量只能在非常窄的生长温度窗口中实现。此外，低生长温度需要特殊的温度测量。在这里，我们展示了通过使用带边温度测量改善 (Hg,Cd)Te 外延层异质结构和 CdTe 纳米线的生长。我们表明，即使对于窄间隙材料，带边温度测量法也提供了一种合适的方法，以高精度和可重复性直接控制生长前沿的温度，