L₂₃VV Auger decays caused by Si:2p core-level photoionization in Cl₃SiSi(CH₃)₃ vapor have been studied by means of photoelectron Auger-electron coincidence spectroscopy. Upon the Si:2p photoionization, Cl₃Si(CH₂)_nSi(CH₃)₃ (n = 0–2) shows two core-photoelectron emissions that are distinguishable by the silicon site. Cl₃SiCH₂CH₂Si(CH₃)₃ (n = 2) and so forth, which have a long inter-site bridge, remember the initially core-ionized silicon-site and show site-specific fragmentation. In contrast, Cl₃SiSi(CH₃)₃, which has direct Si–Si bonding (n = 0), forgets the initially core-ionized silicon-site and shows negligible site-specificity in the final fragmentation stage. A reduction of the site specificity in Cl₃SiSi(CH₃)₃ starts during a Si:L₂₃VV Auger decay and its reduction process can be explained in terms of an interatomic-Coulombic-decay-like mechanism. Another site-specificity reduction, caused by inter-site energy randomization, occurs after every Si:L₂₃VV Auger decay.

利用光电子俄歇-电子符合光谱技术研究了在Cl ₃ SiSi（CH ₃）₃蒸气中由Si：2 p核能级电离引起的L ₂₃ VV俄歇衰变。在Si：2 p光电离后，Cl ₃ Si（CH ₂）_n Si（CH ₃）₃（n = 0-2）显示出两个可通过硅位点区分的核心光电子发射。Cl ₃ SiCH ₂ CH ₂ Si（CH ₃）₃（n= 2），依此类推，它们之间有一个较长的站点间桥，请记住最初的核心电离的硅站点并显示特定于站点的碎片。相反，具有直接Si-Si键（n = 0）的Cl ₃ SiSi（CH ₃）₃忘记了最初被核心离子化的硅位点，并且在最后的断裂阶段显示出可忽略的位点特异性。在Si：L ₂₃ VV期间，开始降低Cl ₃ SiSi（CH ₃）₃中的位点特异性俄歇衰变及其还原过程可以用原子间库仑衰变样机理来解释。在每个Si：L ₂₃ VV Auger衰减之后，会发生由站点间能量随机化引起的另一种站点特异性降低。