Thermally conductive ternary poly (vinylidene fluoride) (PVDF)-based dielectric materials were fabricated via engineering the filler networks using hexagonal boron nitride (hBN) nanosheets and surface functionalized silicon carbide (f-SiC) nanowires. The hBN nanosheets and f-SiC nanowires synergistically improved the thermal conductivity of the composites, in a way that parallelly oriented f-SiC nanowires bridged by the hBN nanosheet networks. The ternary composites with 20 wt% hBN nanosheets and 26 wt% f-SiC nanowires exhibited a high thermal conductivity of 1.41 W/mK, about 5.9 times of that of neat PVDF. In addition, the ternary composites showed superior dielectric permittivity, while maintaining a low loss at 1 kHz. The presence of f-SiC nanowires contributed to the interfacial polarization between the fillers and PVDF matrix, resulting in the increased dielectric permittivity. Meanwhile, low dielectric loss could be maintained due to the isolation of f-SiC nanowires by insulating hBN nanosheets and PVDF matrix.

通过使用六方氮化硼（hBN）纳米片和表面功能化的碳化硅（f-SiC）纳米线对填料网络进行工程设计，制造了基于导热三元聚偏二氟乙烯（PVDF）的介电材料。hBN纳米片和f-SiC纳米线以通过hBN纳米片网络桥接的平行取向的f-SiC纳米线的方式协同提高了复合材料的导热性。具有20 wt％的hBN纳米片和26 wt％的f-SiC纳米线的三元复合材料具有1.41 W / mK的高热导率，约为纯PVDF的5.9倍。此外，三元复合材料显示出优异的介电常数，同时在1 kHz时保持低损耗。f-SiC纳米线的存在有助于填料和PVDF基质之间的界面极化，导致介电常数增加。同时，由于通过隔离hBN纳米片和PVDF基质隔离了f-SiC纳米线，可以保持低介电损耗。