Abstract A silicon-based light source using simple manufacturing process and having excellent luminous efficiency is significantly desired for the development of optoelectronic integrated circuits. In this paper, an integrated poly-silicon avalanche mode light-emitting-device (poly-SiAMLED) is fabricated using a complementary metal oxide semiconductor (CMOS) process. It utilizes the poly-silicon p-n junctions in avalanche breakdown to achieve illumination and employs the carrier injection technology to achieve about 2.9 × 10−7 external quantum efficiency and about 2.2 × 10−8 power conversion efficiency. Moreover, it is easy to fabricate because the process is compatible with the existing integrated circuit process. The proposed device can be used as one of the components of the optoelectronic interface in optoelectronic integrated circuits.

中文翻译：

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基于多晶硅发光器件的标准硅-CMOS 集成电路中的电光接口

摘要 光电子集成电路的发展迫切需要一种制造工艺简单、发光效率高的硅基光源。在本文中，使用互补金属氧化物半导体 (CMOS) 工艺制造了集成多晶硅雪崩模式发光器件 (poly-SiAMLED)。它利用雪崩击穿中的多晶硅pn结实现照明，并采用载流子注入技术实现约2.9×10-7的外量子效率和约2.2×10-8的功率转换效率。此外，由于该工艺与现有的集成电路工艺兼容，因此易于制造。所提出的器件可用作光电集成电路中光电接口的组件之一。