Abstract In the present work, CuZnSe2 (CZSe) thin films were co-deposited by magnetron sputtering of ZnSe and Cu targets. The structural analyses resulted in the stoichiometric elemental composition and polycrystalline nature without secondary phase contribution in the film structure. Optical and electrical properties of CZSe thin films were investigated using temperature-dependent optical transmission and electrical conductivity measurements. The band gap energy values were obtained using transmittance spectra under the light of expression relating absorption coefficient to incident photon energy. Band gap energy values were found in decreasing behavior from 2.31 to 2.27 eV with increase in temperature from 10 to 300 K. Temperature-band gap dependency was evaluated by Varshni and O'Donnell models to detail the optical parameters of the thin films. The experimental dark and photoconductivity values were investigated by thermionic emission model over the grain boundary potential. Room temperature conductivity values were obtained in between 0.91 and 4.65 (× 10−4 Ω−1cm−1) under various illumination intensities. Three different linear conductivity regions were observed in the temperature dependent profile. These linear regions were analyzed to extract the activation energy values.

中文翻译：

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CuZnSe2 薄膜的温度相关材料表征

摘要 在目前的工作中，CuZnSe2 (CZSe) 薄膜是通过磁控溅射 ZnSe 和 Cu 靶材共沉积的。结构分析导致膜结构中没有第二相贡献的化学计量元素组成和多晶性质。使用温度相关的光传输和电导率测量来研究 CZSe 薄膜的光学和电学特性。根据吸收系数与入射光子能量相关的表达式，使用透射光谱获得带隙能量值。随着温度从 10 增加到 300 K，带隙能量值从 2.31 到 2.27 eV 降低。温度-带隙依赖性由 Varshni 和 O' 评估 Donnell 模型以详细说明薄膜的光学参数。通过晶界电位上的热电子发射模型研究了实验暗和光电导率值。在各种光照强度下，室温电导率值在 0.91 和 4.65 (× 10-4 Ω-1cm-1) 之间获得。在温度相关曲线中观察到三个不同的线性电导率区域。分析这些线性区域以提取活化能值。在温度相关曲线中观察到三个不同的线性电导率区域。分析这些线性区域以提取活化能值。在温度相关曲线中观察到三个不同的线性电导率区域。分析这些线性区域以提取活化能值。