Abstract The optical properties of InP/InGaP quantum structures (QSs) grown using migration-enhanced molecular beam epitaxy at growth temperatures ranging from 440 to 520 °C were investigated using temperature-dependent photoluminescence (PL) and time-resolved PL spectroscopies. As the growth temperature increased from 440 to 520 °C, the PL peak energies originating from quantum dots and quantum dashes were blue-shifted, which is attributed to the intermixing of InP and Ga in the InGaP wetting layer. The structural and luminescence properties of InP/InGaP QSs strongly depend on the growth temperatures. The sample grown at 460 °C exhibited the strongest PL intensity at room temperature. In addition, as the temperature increased from 10 to 220 K, the PL decay time of the sample grown at 460 °C increased up to 100 K and then, gradually decreased up to 220 K. The PL decay times of the sample grown at 520 °C increased up to 60 K and then, rapidly decreased up to 120 K. The strongest PL intensity at room temperature and the longest decay time at 100 K for the sample grown at 460 °C indicate that the temperature of 460 °C is optimal for the formation of the InP/InGaP QSs.

中文翻译：

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使用迁移增强外延在不同生长温度下生长的 InP/InGaP 量子结构的温度相关载流子动力学

摘要 使用温度相关光致发光 (PL) 和时间分辨 PL 光谱研究了在 440 至 520 °C 的生长温度下使用迁移增强分子束外延生长的 InP/InGaP 量子结构 (QSs) 的光学性质。随着生长温度从 440°C 增加到 520°C，源自量子点和量子破折号的 PL 峰值能量发生蓝移，这归因于 InP 和 Ga 在 InGaP 润湿层中的混合。InP/InGaP QSs 的结构和发光特性在很大程度上取决于生长温度。在 460 °C 生长的样品在室温下表现出最强的 PL 强度。此外，随着温度从 10 K 增加到 220 K，在 460 °C 下生长的样品的 PL 衰减时间增加到 100 K，然后，