Field-free switching of a perpendicularly magnetized ferromagnetic layer by spin–orbit torque (SOT) from the spin Hall effect is of great interest in the applications of magnetic memory devices. In this paper we investigate by micromagnetic simulations the possibility of deterministic field-free switching by combining SOT with the Dzyaloshinskii–Moriya interaction (DMI). We confirmed that within a certain range of DMI values and charge current densities, it is possible to deterministically switch the magnetization without the assistance of an external magnetic field. SOT terms including Slonczewski-like (damping-like) torque and field-like torque (FLT) are considered when analyzing the SOT switching and domain wall dynamics. We show that the FLT could play an adverse role in blocking and slowing down the magnetization switching under certain cases of DMI and charge current-driven field-free switching. However, in other cases, FLT assists DMI in the deterministic field-free SOT s...

中文翻译：

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通过Dzyaloshinskii-Moriya相互作用和阻尼和类似场的自旋轨道转矩的联合作用，对垂直磁化的铁磁层进行确定性的无场切换：评估

自旋霍尔效应通过自旋轨道转矩（SOT）对垂直磁化的铁磁层进行无场切换在磁存储器件的应用中引起了极大的兴趣。在本文中，我们通过微磁仿真研究了将SOT与Dzyaloshinskii-Moriya相互作用（DMI）结合使用的确定性无场切换的可能性。我们确认，在一定的DMI值和充电电流密度范围内，可以确定性地切换磁化强度而无需外部磁场的帮助。在分析SOT切换和磁畴壁动力学时，应考虑SOT术语，包括Slonczewski样（阻尼）转矩和FTL场转矩。我们表明，在某些DMI和充电电流驱动的无场开关情况下，FLT可能在阻止和减慢磁化开关方面起不利作用。但是，在其他情况下，FLT可以帮助DMI进行确定性的无现场SOT服务。