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Evolution of Domain Structure in PbZr0.52Ti0.48O3 Thin Film by Adding Dysprosium
Thin Solid Films ( IF 2.0 ) Pub Date : 2020-05-01 , DOI: 10.1016/j.tsf.2020.137940
Jongchul Jeon , Kyou-Hyun Kim

Abstract In this study, we improve the thermal stability of PbZr0.52Ti0.48O3 thin film by Dy doping (Dy = 0–4 at.%). The PZT solution is prepared from lead acetate trihydrate, zirconium n-propoxide, and titanium (IV) isopropoxide to have the composition in the morphotropic phase boundary of PbZr(1-x)TixO3 (x = 0.48 at.%); using a spin coater, the solution is then deposited onto a Pt coated Si substrate. The polarization-electric field hysteresis loop shows that the polarization density (μC/cm2) of Dy-doped PZT thin films are enhanced as the amount of Dy increases. Local symmetry study using convergent beam electron diffraction technique then reveals that the Dy doping induces phase transition from P4mm-like to Pm-like symmetry, which has not been found in PZT.

中文翻译:

添加镝对PbZr0.52Ti0.48O3薄膜畴结构的演变

摘要 在本研究中,我们通过 Dy 掺杂(Dy = 0–4 at.%)提高了 PbZr0.52Ti0.48O3 薄膜的热稳定性。PZT 溶液是由三水合醋酸铅、正丙醇锆和异丙醇钛 (IV) 制备的,其组成在 PbZr(1-x)TixO3 (x = 0.48 at.%) 的同形相界;使用旋涂机,然后将溶液沉积在 Pt 涂层的 Si 基板上。极化电场磁滞回线表明,Dy 掺杂的 PZT 薄膜的极化密度(μC/cm2)随着 Dy 量的增加而增强。使用会聚束电子衍射技术进行的局部对称性研究表明,Dy 掺杂诱导了从 P4mm 类到 Pm 类对称性的相变,这在 PZT 中没有发现。
更新日期:2020-05-01
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