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Recombination luminescence of X-ray induced paramagnetic defects in BaY2F8
Journal of Luminescence ( IF 3.3 ) Pub Date : 2020-07-01 , DOI: 10.1016/j.jlumin.2020.117216
Andris Antuzevics , Andris Fedotovs , Dzintars Berzins , Uldis Rogulis , Krisjanis Auzins , Aleksejs Zolotarjovs , Sonia Licia Baldochi

Abstract Recombination luminescence (RL) and RL-detected electron paramagnetic resonance (RL-EPR) in BaY2F8 single crystal has been investigated after irradiation with X-rays at low temperature. The recombination process, which lasts for several hours at 4 K, results in several broad bands in the RL spectrum. RL-EPR spectra show pronounced angular dependences on crystal orientation relative to external magnetic field. Based on the determined spin-Hamiltonian parameter values the recombination centres have been proposed to be F-type electron and self-trapped hole (VK) centres.

中文翻译:

BaY2F8 中 X 射线诱导顺磁缺陷的复合发光

摘要 研究了低温 X 射线照射后 BaY2F8 单晶的复合发光 (RL) 和 RL 检测电子顺磁共振 (RL-EPR)。在 4 K 下持续数小时的重组过程会在 RL 光谱中产生几个宽带。RL-EPR 光谱显示相对于外部磁场的晶体取向有明显的角度依赖性。基于确定的自旋哈密顿参数值,重组中心被提议为 F 型电子和自陷空穴 (VK) 中心。
更新日期:2020-07-01
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