Lateral Gating of 2D Electron Gas in Cross‐Sectional LaAlO3/SrTiO3,Advanced Electronic Materials

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Lateral Gating of 2D Electron Gas in Cross‐Sectional LaAlO3/SrTiO3
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-03-12 , DOI: 10.1002/aelm.202000068
Fan Ji _{1,

2} , Pankaj Sharma _{1,

2} , Tongzheng Xin _{1,

2} , Dawei Zhang _{1,

2} , Ying Liu ₃ , Ranming Niu ₃ , Julie M. Cairney ₃ , Jan Seidel _{1,

2}

Affiliation

2D electron gas at LaAlO₃/SrTiO₃ (LAO/STO) interfaces has emerged as an attractive platform for novel nanoelectronic devices. Control over the active functional interface by electrical or mechanical means in this regard is of special interest. A new means of electric‐field control by lateral gating of the interface and modification of its electronic properties in cross‐sectional samples that allows direct access to depth‐resolved physical‐property measurements is investigated. Local scanning probe measurements in conjunction with electrical characterization allow it to be established that field‐driven reversible migration of oxygen vacancies is the origin of enhancement and suppression of electronic conductivity in LAO/STO. These results point to new possibilities of device property control in complex oxide heterostructures and thin films that contain highly conductive engineered interfaces.

中文翻译：

截面LaAlO3 / SrTiO3中二维电子气的横向门控

LaAlO ₃ / SrTiO ₃处的二维电子气（LAO / STO）接口已经成为新型纳米电子设备的诱人平台。在这方面，通过电气或机械方式对活动功能接口的控制是特别令人关注的。研究了一种新的电场控制方法，该方法通过对界面进行横向门控并修改横截面样品中的电子特性，从而可以直接访问深度解析的物理性能测量值。结合电学特性进行的局部扫描探针测量可以确定氧驱动空位的场驱动可逆迁移是增强和抑制LAO / STO中电子电导率的起源。

更新日期：2020-03-12

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