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Three-dimensional hierarchical semi-polar GaN/InGaN MQW coaxial nanowires on a patterned Si nanowire template
Nanoscale Advances ( IF 4.6 ) Pub Date : 2020-03-12 , DOI: 10.1039/d0na00115e Muhammad Ali Johar 1 , Taeyun Kim 1 , Hyun-Gyu Song 2 , Aadil Waseem 1 , Jin-Ho Kang 1, 3 , Mostafa Afifi Hassan 1 , Indrajit V Bagal 1 , Yong-Hoon Cho 2 , Sang-Wan Ryu 1
Nanoscale Advances ( IF 4.6 ) Pub Date : 2020-03-12 , DOI: 10.1039/d0na00115e Muhammad Ali Johar 1 , Taeyun Kim 1 , Hyun-Gyu Song 2 , Aadil Waseem 1 , Jin-Ho Kang 1, 3 , Mostafa Afifi Hassan 1 , Indrajit V Bagal 1 , Yong-Hoon Cho 2 , Sang-Wan Ryu 1
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We have demonstrated for the first time the hybrid development of next-generation 3-D hierarchical GaN/InGaN multiple-quantum-well nanowires on a patterned Si nanowire-template. The patterned Si nanowire-template is fabricated using metal-assisted chemical-etching, and the conformal growth of the GaN/InGaN multiple-quantum-well (MQW) coaxial nanowires is conducted using metal–organic-chemical-vapor-deposition by the two-step growth approach of vapor–liquid–solid for the GaN core and vapor–solid for the GaN/InGaN MQW shells. The growth directions of the GaN nanowires are confirmed by transmission electron microscopy and selected area electron diffraction patterns. The emission of the GaN/InGaN MQW nanowire is tuned from 440 nm to 505 nm by increasing the InGaN quantum-well thickness. The carrier dynamics were evaluated by performing temperature-dependent time-resolved photoluminescence measurement, and the radiative lifetime of photogenerated electron–hole pairs was found to range from 30 to 35 ps. A very high IQE of 56% was measured due to the suppressed quantum-confined Stark effect which was enabled by the semi-polar growth facet of the GaN/InGaN MQWs. The demonstration of the growth of the hybrid 3-D hierarchical GaN/InGaN MQW nanowires provides a seamless platform for a broad range of multifunctional optical and electronic applications.
中文翻译：
图案化 Si 纳米线模板上的三维分层半极性 GaN/InGaN MQW 同轴纳米线
我们首次展示了在图案化硅纳米线模板上混合开发下一代 3D 分层 GaN/InGaN 多量子阱纳米线。图案化的 Si 纳米线模板是使用金属辅助化学蚀刻制造的，并且 GaN/InGaN 多量子阱 (MQW) 同轴纳米线的保形生长是使用金属有机化学气相沉积由两个GaN 核采用气-液-固逐步生长方法，GaN/InGaN MQW 壳采用气-固逐步生长方法。 GaN 纳米线的生长方向通过透射电子显微镜和选区电子衍射图案得到证实。通过增加 InGaN 量子阱厚度，GaN/InGaN MQW 纳米线的发射波长从 440 nm 调整到 505 nm。通过执行温度依赖性时间分辨光致发光测量来评估载流子动力学，发现光生电子空穴对的辐射寿命范围为 30 至 35 ps。由于 GaN/InGaN MQW 的半极性生长面抑制了量子限制斯塔克效应，测得的 IQE 高达 56%。混合 3D 分层 GaN/InGaN MQW 纳米线的生长演示为广泛的多功能光学和电子应用提供了无缝平台。
更新日期：2020-04-24
中文翻译：
图案化 Si 纳米线模板上的三维分层半极性 GaN/InGaN MQW 同轴纳米线
我们首次展示了在图案化硅纳米线模板上混合开发下一代 3D 分层 GaN/InGaN 多量子阱纳米线。图案化的 Si 纳米线模板是使用金属辅助化学蚀刻制造的，并且 GaN/InGaN 多量子阱 (MQW) 同轴纳米线的保形生长是使用金属有机化学气相沉积由两个GaN 核采用气-液-固逐步生长方法，GaN/InGaN MQW 壳采用气-固逐步生长方法。 GaN 纳米线的生长方向通过透射电子显微镜和选区电子衍射图案得到证实。通过增加 InGaN 量子阱厚度，GaN/InGaN MQW 纳米线的发射波长从 440 nm 调整到 505 nm。通过执行温度依赖性时间分辨光致发光测量来评估载流子动力学，发现光生电子空穴对的辐射寿命范围为 30 至 35 ps。由于 GaN/InGaN MQW 的半极性生长面抑制了量子限制斯塔克效应，测得的 IQE 高达 56%。混合 3D 分层 GaN/InGaN MQW 纳米线的生长演示为广泛的多功能光学和电子应用提供了无缝平台。
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