Efficient defect passivation of Sb2Se3 film by tellurium doping for high performance solar cells,Journal of Materials Chemistry A

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Efficient defect passivation of Sb2Se3 film by tellurium doping for high performance solar cells
Journal of Materials Chemistry A ( IF 10.7 ) Pub Date : 2020/03/12 , DOI: 10.1039/d0ta00443j
Yuyuan Ma _{1,

2,

3,

4,

5} , Beibei Tang _{1,

3,

6,

7,

8} , Weitao Lian _{1,

2,

3,

4,

5} , Chunyan Wu _{1,

2,

3,

4,

5} , Xiaomin Wang _{1,

2,

3,

4,

5} , Huanxin Ju _{3,

4,

9,

10} , Changfei Zhu _{1,

2,

3,

4,

5} , Fengjia Fan _{1,

3,

6,

7,

8} , Tao Chen _{1,

2,

3,

4,

5}

Affiliation

Defects in a semiconductor dictate the carrier transport and recombination ability, which are critical factors that influence the power conversion efficiency in solar cells. In this study, we demonstrate that the introduction of tellurium is able to fine tune the atomic ratio of Se/Sb in Sb₂Se₃ thin films, both Se-rich and Sb-rich Sb₂Se₃ are obtained. Using fine-tuned device fabrication and deep level defect spectroscopy for characterization, we experimentally disclose that Se-rich Sb₂Se₃ favors the formation of Se_Sb and V_Sb defects, while Sb-rich films benefit the formation of Sb_Se and V_Se defects. With an appropriate excess of Se in Sb₂Se₃, a net efficiency improvement of 2% is obtained when compared with pristine Sb₂Se₃ based solar cells. Our study provides an effective strategy to manipulate the defect formation in Sb₂Se₃ solar cells and inspires further improvement in the efficiency of Sb₂Se₃ solar cells.

中文翻译：

碲掺杂高效太阳能电池对Sb2Se3膜的有效缺陷钝化

半导体中的缺陷决定了载流子的传输和复合能力，这是影响太阳能电池功率转换效率的关键因素。在这项研究中，我们证明碲的引入能够微调Sb ₂ Se ₃薄膜中Se / Sb的原子比，同时获得富硒和富Sb的Sb ₂ Se ₃。使用微调器件制造和深能级缺陷光谱进行表征，我们通过实验揭示了富硒的Sb ₂ Se ₃有利于形成硒_锑和钒_锑的缺陷，而富硒的薄膜有利于_硒锑和_硒的形成缺陷。与原始的基于Sb ₂ Se ₃的太阳能电池相比，在Sb ₂ Se _3中具有适当过量的Se时，净效率提高了2％。我们的研究提供了一种有效的策略来控制Sb ₂ Se ₃太阳能电池中缺陷的形成，并激发了Sb ₂ Se ₃太阳能电池效率的进一步提高。

更新日期：2020-04-08

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