Abstract To understand the effect of deposition sequence of ferroelectric HfZrO, we investigated the ferroelectric polarization characteristics of a 50%-zirconium-doped HfZrO and a stacked HfZrO metal-ferroelectric-metal capacitors. Based on experimental results, we find that the leakage current can be effectively suppressed in stacked HfZrO film. The film stack structure is favorable for simultaneously stabilizing the ferroelectric polarization and minimizing the generation of interface defect traps during the post-metal annealing process with a thermal budget of 600 – 800 °C, which is favorable for complementary-metal-oxide-semiconductor frond- and back-end process integration with various thermal budget requirement.

中文翻译：

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使用掺杂和堆叠铪氧化锆的金属-铁电-金属器件的比较研究

摘要 为了了解铁电 HfZrO 沉积顺序的影响，我们研究了 50% 锆掺杂的 HfZrO 和堆叠的 HfZrO 金属-铁电-金属电容器的铁电极化特性。根据实验结果，我们发现在堆叠的 HfZrO 薄膜中可以有效地抑制漏电流。薄膜堆叠结构有利于同时稳定铁电极化和减少金属后退火过程中界面缺陷陷阱的产生，热预算为 600 – 800 °C，有利于互补金属氧化物半导体- 以及具有各种热预算要求的后端流程集成。