Abstract Antimony sulfide Sb2S3 is an emerging photovoltaic absorber, which has been widely studied on synthesis route, device structure and interface. However, its device performance is still limited by the unoptimized Sb2S3 absorber and interface recombination, in which the neglected character of thickness is unclear. Here, the effect of absorber thickness on the Sb2S3 thin film solar cell was carefully investigated in the range of 80–620 nm, aiming to reveal the trade-off between charge separation and light absorption in the device. The characterization of JV and Sb2S3 thin film found that too thin Sb2S3 would lower the VOC and JSC, which was attributed to the severe shunt and insufficient absorption. While the too thick Sb2S3 would hinder the charge separation. This tendency was also confirmed by the performance simulation of device. Finally, the best power conversion efficiency of 4.96% is achieved with a 544 nm Sb2S3 absorber. This work provides the guidance to optimize the thickness of Sb2S3 absorber for solar cells.

中文翻译：

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吸收体厚度对平面 Sb2S3 薄膜太阳能电池的影响：光吸收和电荷分离之间的权衡

摘要 硫化锑Sb2S3是一种新兴的光伏吸收剂，在合成路线、器件结构和界面等方面得到了广泛的研究。然而，其器件性能仍然受到未优化的 Sb2S3 吸收体和界面复合的限制，其中厚度的被忽略特征尚不清楚。在这里，在 80-620 nm 范围内仔细研究了吸收体厚度对 Sb2S3 薄膜太阳能电池的影响，旨在揭示器件中电荷分离和光吸收之间的权衡。JV和Sb2S3薄膜的表征发现，过薄的Sb2S3会降低VOC和JSC，这归因于严重的分流和吸收不足。而太厚的 Sb2S3 会阻碍电荷分离。器件的性能模拟也证实了这一趋势。最后，使用 544 nm Sb2S3 吸收剂可实现 4.96% 的最佳功率转换效率。这项工作为优化太阳能电池 Sb2S3 吸收体的厚度提供了指导。