Abstract In this work, we investigate the influence of the internal electric field induced by the polarization inside the active region of the p-i-n photodiode on the characteristics of InN/In x Ga 1 - x N quantum dots intermediate band solar cell. Considering the conduction and valence band offsets, the electron and hole energy levels have been determined by solving analytically the corresponding Schrodinger equations. The hole level, usually neglected in similar studies, is taken into account to determine all the intermediate transitions. All parameters of multiple quantum dot solar cells such as open-circuit voltage, short-circuit current density and photovoltaic conversion efficiency are determined as functions of the indium content, the internal electric field, inter-dot distances and dot sizes. Our calculations show that determining the photovoltaic conversion efficiency ( η ) without taking into account the internal electric field leads to an overestimation of η .

中文翻译：

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内极化电场对 InN/InxGa1-xN 多量子点太阳能电池效率的影响

摘要 在这项工作中，我们研究了pin 光电二极管有源区内部极化引起的内部电场对InN/In x Ga 1 - x N 量子点中带太阳能电池特性的影响。考虑到导带和价带偏移，通过解析相应的薛定谔方程来确定电子和空穴能级。在类似的研究中通常忽略的孔能级被考虑在内来确定所有的中间过渡。多量子点太阳能电池的所有参数，如开路电压、短路电流密度和光伏转换效率，都被确定为铟含量、内部电场、点间距和点尺寸的函数。