Abstract The electroluminescence from the amorphous gallium-indium-zinc oxide (a-GIZO)/p-GaN heterojunction light-emitting diodes (LEDs) were demonstrated. The heterojunction LEDs showed a current flow under both forward and reverse bias voltages. The light emissions were observed at around 410 nm (originating from p-GaN) and ~450–800 nm (originating from interfacial layer and/or from a-GIZO), which were particularly pronounced under reverse bias condition. As a result, the standard white light with the chromaticity coordinate of (0.2899, 0.3034) was obtained.

中文翻译：

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非晶 GIZO/p-GaN 异质结发光二极管的电致发光

摘要 展示了非晶镓铟锌氧化物 (a-GIZO)/p-GaN 异质结发光二极管 (LED) 的电致发光。异质结 LED 在正向和反向偏置电压下都显示出电流。在大约 410 nm（源自 p-GaN）和~450-800 nm（源自界面层和/或 a-GIZO）处观察到光发射，这在反向偏置条件下特别明显。结果得到色度坐标为(0.2899,0.3034)的标准白光。