This study examined the fabrication of high‐density rhombohedral ZnSnO₃ nanowire arrays on fluorine‐doped SnO₂ (FTO) substrates through single‐step hydrothermal synthesis and their synergistic piezo‐related performance. The band gap (approximately 3.7 eV) and valence band (E _v) position (approximately 2.7 eV below the Fermi energy of Au [approximately −4.9 eV]) of the arrays were obtained using ultraviolet‐visible (UV‐Vis) spectrometry and UV photoelectron spectroscopy, respectively. An energy band diagram was obtained, revealing the favorable band positions of the samples for photodegradation and water splitting. Reliable and superior piezophotodegradation capability with a degradation rate constant of approximately 17.6 × 10⁻³ min⁻¹ was also observed. Holes and •OH were predominant for the degradation mechanism, as determined by scavenger studies. Moreover, the samples exhibited favorable piezophotoelectrochemical (PPEC) performance, which was validated by the obtained applied bias photon‐to‐current efficiency. The stress‐induced photocurrent density observed in a PPEC reaction was more than twice that observed in a photoelectrochemical reaction. Both piezophotodegradation and PPEC reactions were attributable to the inhibition of electron‐hole pair recombination because of the excellent alignment of the nanowires, piezopotential buildup, and band bending of the ZnSnO₃ nanowires. Our results indicate a positive effect of piezoelectricity on the piezo‐related applications of the sample.

中文翻译：

---

单步水热合成制备高密度ZnSnO3纳米线阵列

这项研究检查了通过一步水热合成在掺氟SnO ₂（FTO）衬底上制备高密度菱形ZnSnO ₃纳米线阵列及其协同压电相关性能。使用紫外可见（UV-Vis）光谱仪和紫外光谱仪获得了阵列的带隙（约3.7 eV）和价带（E _v）位置（比Au的费米能量低Au约2.7 eV [约-4.9 eV]）。光电子能谱，分别。获得了能带图，揭示了用于光降解和水分解的样品的有利带位置。可靠且优异的压电光降解能力，降解速率常数约为17.6×10 ^-3还观察到 min ^-1。根据清除剂研究，孔和•OH是降解机理的主要成分。此外，样品表现出良好的压电光电化学性能（PPEC），这已通过所获得的施加的偏置光子-电流效率得到了验证。在PPEC反应中观察到的应力诱导的光电流密度是在光电化学反应中观察到的两倍以上。压电光降解和PPEC反应均归因于电子-空穴对重组的抑制，因为纳米线的出色排列，压电势的积累和ZnSnO ₃纳米线的能带弯曲。我们的结果表明，压电性对样品的压电相关应用有积极影响。