Memories in the photoluminescence intermittency of single cesium lead bromide nanocrystals,Nanoscale

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Memories in the photoluminescence intermittency of single cesium lead bromide nanocrystals
Nanoscale ( IF 5.8 ) Pub Date : 2020/03/10 , DOI: 10.1039/d0nr00633e
Lei Hou _{1,

2,

3,

4,

5} , Chen Zhao _{6,

7,

8,

9,

10} , Xi Yuan _{9,

10,

11} , Jialong Zhao _{9,

10,

11} , Franziska Krieg _{12,

13,

14,

15,

16} , Philippe Tamarat _{1,

2,

3,

4,

5} , Maksym V. Kovalenko _{12,

13,

14,

15,

16} , Chunlei Guo _{6,

7,

8,

9,

10} , Brahim Lounis _{1,

2,

3,

4,

5}

Affiliation

Single cesium lead bromide (CsPbBr₃) nanocrystals show strong photoluminescence intermittency, with on- and off- dwelling times following power-law distributions. We investigate the correlations for successive on-times and successive off-times, and find a memory effect in the photoluminescence intermittency of such inorganic perovskite nanocrystals. This memory effect is not sensitive to the nature of the surface capping ligand and the embedding polymer. These observations suggest that photoluminescence intermittency and its memory are mainly controlled by intrinsic traps in the nanocrystals. Our findings will help optimizing light-emitting devices based on these perovskite nanocrystals.

中文翻译：

溴化铯铯纳米晶体的光致发光间歇性中的记忆

单溴化铯铯（CsPbBr ₃）纳米晶体表现出很强的光致发光间歇性，其上和下停留时间遵循幂律分布。我们调查连续时间和连续关闭时间的相关性，并发现这种无机钙钛矿纳米晶体的光致发光间歇性的记忆效应。该记忆效应对表面封盖配体和包埋聚合物的性质不敏感。这些观察结果表明，光致发光的间歇性及其记忆主要受纳米晶体中的固有陷阱控制。我们的发现将有助于优化基于这些钙钛矿纳米晶体的发光器件。

更新日期：2020-03-27

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