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Wafer-size growth of 2D layered SnSe films for UV-Visible-NIR photodetector arrays with high responsitivity
Nanoscale ( IF 5.8 ) Pub Date : 2020/03/09 , DOI: 10.1039/d0nr00319k Lanzhong Hao 1, 2, 3, 4 , Yongjun Du 1, 2, 3, 4 , Zegao Wang 4, 5, 6, 7, 8 , Yupeng Wu 1, 2, 3, 4 , Hanyang Xu 1, 2, 3, 4 , Shichang Dong 1, 2, 3, 4 , Hui Liu 1, 2, 3, 4 , Yunjie Liu 1, 2, 3, 4 , Qingzhong Xue 1, 2, 3, 4 , Zhide Han 1, 2, 3, 4 , Keyou Yan 4, 9, 10, 11, 12 , Mingdong Dong 8, 13, 14, 15, 16
Nanoscale ( IF 5.8 ) Pub Date : 2020/03/09 , DOI: 10.1039/d0nr00319k Lanzhong Hao 1, 2, 3, 4 , Yongjun Du 1, 2, 3, 4 , Zegao Wang 4, 5, 6, 7, 8 , Yupeng Wu 1, 2, 3, 4 , Hanyang Xu 1, 2, 3, 4 , Shichang Dong 1, 2, 3, 4 , Hui Liu 1, 2, 3, 4 , Yunjie Liu 1, 2, 3, 4 , Qingzhong Xue 1, 2, 3, 4 , Zhide Han 1, 2, 3, 4 , Keyou Yan 4, 9, 10, 11, 12 , Mingdong Dong 8, 13, 14, 15, 16
Affiliation
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Due to its excellent electrical and optical properties, tin selenide (SnSe), a typical candidate of two-dimensional (2D) semiconductors, has attracted great attention in the field of novel optoelectronics. However, the large-area growth of high-quality SnSe films still remains a great challenge, which limits their practical applications. Here, wafer-size SnSe ultrathin films with high uniformity and crystallization were deposited via a scalable magnetron sputtering method. The results showed that the SnSe photodetector was highly sensitive to a broad range of wavelengths in the UV-visible-NIR range, especially showing an extremely high responsivity of 277.3 A W−1 with the corresponding external quantum efficiency of 8.5 × 104% and detectivity of 7.6 × 1011 Jones. These figures of merits are among the best performances for the sputter-fabricated 2D photodetector devices. The photodetecting mechanisms based on a photogating effect induced by the trapping effect of localized defects are discussed in detail. The results indicate that the few-layered SnSe films obtained from sputtering growth have great potential in the design of high-performance photodetector arrays.
中文翻译：
具有高响应度的用于UV-Visible-NIR光电探测器阵列的2D分层SnSe膜的晶片尺寸生长
由于硒化锡（SnSe）具有出色的电学和光学特性，它是二维（2D）半导体的典型候选材料，在新型光电技术领域中引起了极大的关注。然而，高质量SnSe薄膜的大面积生长仍然是一个巨大的挑战，这限制了它们的实际应用。在此，通过可缩放的磁控溅射方法沉积具有高均匀性和结晶性的晶片尺寸的SnSe超薄膜。结果表明，SnSe光电探测器对紫外-可见-近红外范围内的宽波长范围都高度敏感，特别是显示出277.3 AW -1的极高响应度，相应的外部量子效率为8.5×10 4％和检测率的7.6×1011琼斯。这些优点是溅射制造的2D光电探测器设备的最佳性能之一。详细讨论了基于由局部缺陷的俘获效应引起的光闸效应的光检测机理。结果表明，通过溅射生长获得的几层SnSe膜在高性能光电探测器阵列的设计中具有巨大的潜力。
更新日期：2020-04-03
中文翻译：
具有高响应度的用于UV-Visible-NIR光电探测器阵列的2D分层SnSe膜的晶片尺寸生长
由于硒化锡（SnSe）具有出色的电学和光学特性，它是二维（2D）半导体的典型候选材料，在新型光电技术领域中引起了极大的关注。然而，高质量SnSe薄膜的大面积生长仍然是一个巨大的挑战，这限制了它们的实际应用。在此，通过可缩放的磁控溅射方法沉积具有高均匀性和结晶性的晶片尺寸的SnSe超薄膜。结果表明，SnSe光电探测器对紫外-可见-近红外范围内的宽波长范围都高度敏感，特别是显示出277.3 AW -1的极高响应度，相应的外部量子效率为8.5×10 4％和检测率的7.6×1011琼斯。这些优点是溅射制造的2D光电探测器设备的最佳性能之一。详细讨论了基于由局部缺陷的俘获效应引起的光闸效应的光检测机理。结果表明，通过溅射生长获得的几层SnSe膜在高性能光电探测器阵列的设计中具有巨大的潜力。
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