We propose designs of silicon nitride (Si3N4) waveguides with enhanced nonlinear parameter and engineered anomalous group velocity dispersion (GVD) by addition of tellurium oxide (TeO2) top-coating layers of various thicknesses. The proposed waveguides have calculated nonlinear parameters of up to three times that of stoichiometric Si3N4 and exhibit anomalous GVD at near infrared wavelengths. The GVD of such waveguides can be tuned between the normal and anomalous regime with different zero dispersion wavelengths by adjusting the thickness of TeO2 coating. These designs offer promise of higher performance nonlinear devices on a standard low-loss Si3N4 platform with the possibility of integration of active functionalities owing to higher solubility of rare earth dopants in tellurium oxide.

中文翻译：

---

${\rm{TeO_{2}}}$ 涂层 ${\rm{Si_{3}N_{4}}}$ 波导中增强的非线性和工程异常色散

我们建议通过添加各种厚度的氧化碲 (TeO2) 顶涂层来设计具有增强的非线性参数和工程异常群速度色散 (GVD) 的氮化硅 (Si3N4) 波导。所提出的波导计算出的非线性参数高达化学计量 Si3N4 的三倍，并且在近红外波长处表现出异常 GVD。通过调整 TeO2 涂层的厚度，可以在具有不同零色散波长的正常和异常区域之间调整此类波导的 GVD。由于稀土掺杂剂在氧化碲中的溶解度更高，这些设计有望在标准的低损耗 Si3N4 平台上提供更高性能的非线性器件，并具有集成活性功能的可能性。