Indium gallium zinc oxide (IGZO) thin films with various antimony (Sb) substitution contents were prepared on the glass substrate by using sol-gel spin coating technique. After calcined at 550 °C for 1 hr in air, the structure identity, chemical bonding state, optical, and electrical properties of Sb-IGZO thin films were characterized with X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectroscopy (UV-vis), and Hall effect measurement. With the chemical route, the film composition in the form of Sb-x-IGZO with x at 0∼0.3 can be well controlled for the purpose of study on the effect of Sb substitution. The results showed that all Sb-IGZO thin films have an amorphous structure and had optical transmittance above 86.5%, band gap of 3.73 to 3.81 eV, and an n-to-p semiconducting transition at Sb-0.1-IGZO. The Sb-0.2-IGZO films with 89.2% optical transmittance had carrier concentration of 1.67 × 10¹⁵ cm^-3, mobility of 2.35 cm²/V·s, and electrical conductivity of 6.3 × 10^-4 S/cm. The defect mechanism with equations to support the n-to-p transition by substituting Sb³⁺ onto Zn²⁺ site in IGZO has been proposed.

采用溶胶-凝胶旋涂技术在玻璃基板上制备了具有不同锑（Sb）取代含量的铟镓锌氧化物（IGZO）薄膜。在空气中于550°C煅烧1小时后，通过X射线衍射（XRD），场发射扫描电子显微镜（FE-）对Sb-IGZO薄膜的结构特性，化学键合状态，光学和电学性质进行了表征。 SEM），X射线光电子能谱（XPS），紫外可见光谱（UV-vis）和霍尔效应测量。通过化学途径，Sb- x -IGZO形式的薄膜成分具有x为了研究Sb取代的效果，可以很好地控制在0〜0.3的范围。结果表明，所有Sb-IGZO薄膜均具有非晶态结构，透光率高于86.5％，带隙为3.73至3.81 eV，在Sb-0.1-IGZO处具有n-p的半导体过渡。具有89.2％透光率的Sb-0.2-IGZO膜具有1.67×10 ¹⁵ cm ^-3的载流子浓度，2.35cm ² / V·s的迁移率和6.3×10 ^-4 S / cm的电导率。提出了具有方程式的缺陷机理，该方程通过在IGZO中将Sb ³⁺代入Zn ²⁺位点来支持n-p跃迁。