Abstract The dependence of electrical characteristics and gate bias stress stability of N-doped InZnSnO (IZTO:N) thin film transistors (TFTs) on annealing atmosphere was investigated. The annealing process was performed in air, O2 and N2, respectively, after the deposition of IZTO:N thin film by magnetron sputtering. All annealed IZTO:N films are amorphous and show a high transmittance in the visible light range. The N2-annealed TFT has the highest saturation mobility (μSAT) of 39.5 cm2 V−1s−1 and the lowest subthreshold swing (SS) of 0.40 V/decade. The air-annealed TFT shows similar mobility and SS to the N2-annealed TFT while the O2-annealed TFT shows the lowest mobility and the largest SS. We found that annealing atmosphere has impact on the bias stress stability of the TFTs. Bias stress induced threshold voltage shift of the O2-annealed TFTs is reduced compared to that of air-annealed and N2-annealed TFTs due to the decrease in oxygen vacancy.

中文翻译：

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N掺杂InZnSnO薄膜晶体管的退火气氛相关电特性和偏置稳定性

摘要 研究了 N 掺杂 InZnSnO (IZTO:N) 薄膜晶体管 (TFT) 的电气特性和栅极偏置应力稳定性对退火气氛的依赖性。在通过磁控溅射沉积IZTO:N薄膜后，分别在空气、O2和N2中进行退火工艺。所有退火的 IZTO:N 薄膜都是无定形的，在可见光范围内显示出高透射率。经过 N2 退火的 TFT 具有最高的饱和迁移率 (μSAT)，为 39.5 cm2 V-1s-1，最低的亚阈值摆幅 (SS) 为 0.40 V/decade。空气退火 TFT 显示出与 N2 退火 TFT 相似的迁移率和 SS，而 O2 退火 TFT 显示最低迁移率和最大 SS。我们发现退火气氛对 TFT 的偏置应力稳定性有影响。