Piezotronics and piezo-phototronics based on the third generation semiconductors are two novel fields for low power consumption, self-powered technology and internet of things. Strain-induced piezoelectric field plays a key role to modulate not only charge-carrier transport but also quantum transport properties in piezoelectric semiconductors, especially for two-dimensional materials which can withstand large strain. In this paper, we theoretically study piezotronic effect on the modulation of spin and valley properties in single-layered MoS₂. Spin- and valley-dependent conductance, electronic density distribution and polarization ratio are investigated by quantum transport calculation. Because of piezotronic effect, strain-gated spin and valley transistors have excellent quantum state selectivity using by strain. Our work provides not only piezotronic effect on spin and valley quantum states, but also a guidance for designing novel quantum piezotronic devices.

基于第三代半导体的压电和压电光电是低功耗，自供电技术和物联网的两个新领域。应变感应的压电场不仅在调节压电半导体中的电荷载流子传输方面而且在调节量子传输特性方面都起着关键作用，尤其是对于可承受较大应变的二维材料而言。本文从理论上研究了压电效应对单层MoS ₂中自旋和谷值性质的调制。通过量子输运计算研究了自旋和谷依赖的电导，电子密度分布和极化率。由于具有压电效应，应变门控的自旋和谷值晶体管利用应变具有出色的量子态选择性。我们的工作不仅提供对自旋和谷量子态的压电效应，而且为设计新型量子压电器件提供了指导。