The etching strategy of metal‐organic frameworks is an effective process to prepare hollow electrode materials for enhanced electrochemical performance. But the relatively low conductivity of these electrode materials limits their further application. In this work, a series of carbon quantum dots (CQDs) embedded ZIF‐67 precursors (ZIF‐67@CQDs‐X, X  = 1.25, 2.50, 5.00, 7.50) are synthesized firstly. Then, by a facile and controllable chemical etching process, the CQDs doped α‐Co/Ni(OH)₂ hollow nanocages (α‐Co/Ni(OH)₂@CQDs‐X, X  = 1.25, 2.50, 5.00, 7.50) are successfully constructed. The optimized α‐Co/Ni(OH)₂@CQDs‐2.50 electrode delivers a high specific surface area (277.99 m² g⁻¹) and dramatically enhanced conductivity. Therefore, α‐Co/Ni(OH)₂@CQDs‐2.50 electrode presents a high specific capacitance (700 C g⁻¹, 1 A g⁻¹), superior rate performance (550 C g⁻¹, 10 A g⁻¹) and excellent cycling lifespan (retaining 79.93% of initial capacitance after 10 000 cycles). Coupled with the high‐performance PPD/rGO as a negative electrode, the fabricated Co/Ni(OH)₂@CQDs‐2.50//PPD/rGO device exhibits an outstanding energy density of 57.29 Wh kg⁻¹ at the power density of 0.375 kW kg⁻¹. It is proved that the CQDs embedding and chemical etching strategy are an effective way for constructing hollow materials with enhanced energy storage performance.

中文翻译：

---

碳量子点的构建，其中嵌入了具有增强的超级电容器性能的α-Co/ Ni（OH）2空心纳米笼

金属有机骨架的蚀刻策略是制备空心电极材料以增强电化学性能的有效方法。但是这些电极材料的较低电导率限制了它们的进一步应用。在这项工作中，首先合成了一系列嵌入ZIF‐67前体的碳量子点（CQD）（ZIF‐67 @ CQDs‐X，X  = 1.25、2.50、5.00、7.50 ）。然后，通过便捷且可控的化学蚀刻工艺，CQD掺杂了α-Co/ Ni（OH）₂空心纳米笼（α-Co/ Ni（OH）₂ @ CQDs-X，X  = 1.25，2.50，5.00，7.50 ）已成功构建。优化的α-Co/ Ni（OH）₂ @ CQDs-2.50电极可提供高比表面积（277.99 m ²  g^-1）并显着提高电导率。因此，α-钴/镍（OH）₂ @ CQDs-2.50电极呈现一个高的比电容（700℃克^-1，1 A克^-1），优异的倍率性能（550℃克^-1，10 A G ^-1）和出色的循环寿命（在1万次循环后，可保持初始电容的79.93％）。结合高性能PPD / rGO作为负极，制成的Co / Ni（OH）₂ @ CQDs-2.50 // PPD / rGO器件在0.375的功率密度下表现出出色的能量密度57.29 Wh kg ^-1千瓦kg ^-1。实践证明，CQDs的嵌入和化学刻蚀策略是构造具有增强储能性能的空心材料的有效途径。