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Polyvinyl Alcohol/SiO2 Hybrid Dielectric for Transparent Flexible/Stretchable All‐Carbon‐Nanotube Thin‐Film‐Transistor Integration
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-03-09 , DOI: 10.1002/aelm.201901133 Ziwei Zhang 1 , Chunhui Du 1 , Haoxuan Jiao 1 , Min Zhang 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-03-09 , DOI: 10.1002/aelm.201901133 Ziwei Zhang 1 , Chunhui Du 1 , Haoxuan Jiao 1 , Min Zhang 1
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Flexible and stretchable electronic (FSE) transistors create various novel applications. Carbon nanotubes possess high intrinsic mobility and exceptional mechanical and optical characteristics, which lead to a great potential as channel and electrodes in FSE transistors. At the same time, gate dielectric is also required to be intrinsically flexible/stretchable and integratable. However, few high‐performance solutions have been reported. By adopting polyvinyl alcohol (PVA)/SiO2 hybrid layer as dielectric, the integration of high‐performance intrinsically flexible/stretchable carbon‐nanotube‐based thin film transistors is proposed and realized simply by traditional photolithography‐etching and low‐temperature solution processes. The PVA/SiO2 dielectric simultaneously provides a relatively high‐k value, improves the carrier conduction interface, increases the carbon nanotube (CNT) density, and protects the PVA from plasma damage. Soft transistors with carbon nanotube channel and electrodes exhibit carrier mobility of 14 cm2 V−1 s−1 within an operation voltage of 0.3 V. These transistors show a small bending radius of 3 mm, and the stretchable transistors can withstand 50% strain with no significant electrical degradation observed, when measured in situ and along different directions for more than 1000 cycles. This work provides a solution for soft transparent transistor integration, indicating promising applicability to soft circuits, displays, and wearable electronics.
中文翻译：
聚乙烯醇/ SiO2混合电介质，用于透明柔性/可拉伸全碳纳米管薄膜晶体管集成
柔性和可拉伸电子（FSE）晶体管创造了各种新颖的应用。碳纳米管具有很高的固有迁移率以及出色的机械和光学特性，因此在FSE晶体管中作为沟道和电极具有巨大的潜力。同时，还要求栅极电介质本质上是柔性的/可拉伸的和可集成的。但是，鲜有高性能解决方案的报道。通过采用聚乙烯醇（PVA）/ SiO 2杂化层作为介电层，提出并集成了高性能的固有柔性/可拉伸碳纳米管基薄膜晶体管，并通过传统的光刻和低温溶液工艺简单地实现了集成。PVA / SiO 2介电质同时提供相对较高的k值，改善了载流子传导界面，增加了碳纳米管（CNT）的密度，并保护了PVA免受等离子体破坏。具有碳纳米管通道和电极的软晶体管在0.3 V的工作电压内表现出14 cm 2 V -1 s -1的载流子迁移率。这些晶体管的弯曲半径小至3 mm，可拉伸晶体管可承受50％的应变在原位和沿不同方向进行1000个以上的循环测量时，未观察到明显的电降解。这项工作为软透明晶体管集成提供了解决方案，表明了对软电路，显示器和可穿戴电子产品的有希望的适用性。
更新日期：2020-03-09
中文翻译：
聚乙烯醇/ SiO2混合电介质，用于透明柔性/可拉伸全碳纳米管薄膜晶体管集成
柔性和可拉伸电子（FSE）晶体管创造了各种新颖的应用。碳纳米管具有很高的固有迁移率以及出色的机械和光学特性，因此在FSE晶体管中作为沟道和电极具有巨大的潜力。同时，还要求栅极电介质本质上是柔性的/可拉伸的和可集成的。但是，鲜有高性能解决方案的报道。通过采用聚乙烯醇（PVA）/ SiO 2杂化层作为介电层，提出并集成了高性能的固有柔性/可拉伸碳纳米管基薄膜晶体管，并通过传统的光刻和低温溶液工艺简单地实现了集成。PVA / SiO 2介电质同时提供相对较高的k值，改善了载流子传导界面，增加了碳纳米管（CNT）的密度，并保护了PVA免受等离子体破坏。具有碳纳米管通道和电极的软晶体管在0.3 V的工作电压内表现出14 cm 2 V -1 s -1的载流子迁移率。这些晶体管的弯曲半径小至3 mm，可拉伸晶体管可承受50％的应变在原位和沿不同方向进行1000个以上的循环测量时，未观察到明显的电降解。这项工作为软透明晶体管集成提供了解决方案，表明了对软电路，显示器和可穿戴电子产品的有希望的适用性。
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