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The role of PN-like junction effects in energy storage performances for Ag2O nanoparticle dispersed lead-free K0.5Na0.5NbO3-BiMnO3 films
Nanoscale ( IF 5.8 ) Pub Date : 2020/03/09 , DOI: 10.1039/d0nr00726a
Fei Guo 1, 2, 3, 4, 5 , Zhifeng Shi 1, 2, 3, 4, 5 , Bo Yang 1, 2, 3, 4, 5 , Shifeng Zhao 1, 2, 3, 4, 5
Affiliation  

This work designs a PN-like junction structure by introducing Ag2O nanoparticles into lead-free 0.92K0.5Na0.5NbO3-0.08BiMnO3 solid solution films to investigate the role of PN-like junction effects in energy storage performances. It is shown that the energy storage performances are obviously improved with the energy density increasing to 65.1 J cm−3 from 20.1 J cm−3 and the efficiency to 62.6% from 50.7%. The enhancement is attributed to the formation of the depletion layer with high resistance derived from a PN-like junction structure at the interface between Ag2O nanoparticles and matrices. The rectification effect of the high resistance region in PN-like junction improves the insulation and breakdown strength, and the internal local field derived from the high resistance region divides the macroscopic domains, which are attributed to the enhancement of energy storage performances. This work provides an alternative strategy to improve the energy storage performances by designing a PN-like junction structure.

中文翻译:

PN型结效应在Ag2O纳米粒子分散的无铅K0.5Na0.5NbO3-BiMnO3薄膜的储能性能中的作用

这项工作通过将Ag 2 O纳米粒子引入无铅0.92K 0.5 Na 0.5 NbO 3 -0.08BiMnO 3固溶膜中来设计PN状结结构,以研究PN状结效应在储能性能中的作用。结果表明,随着能量密度从20.1 J cm -3增加到65.1 J cm -3,效率从50.7%增加到62.6%,储能性能得到明显改善。增强归因于在Ag 2之间的界面处形成了具有高电阻的耗尽层,该耗尽层源自于类PN结结构O纳米颗粒和基质。PN型结中高电阻区的整流作用提高了绝缘和击穿强度,高电阻区产生的内部局部电场划分了宏观区域,这归因于能量存储性能的提高。这项工作为通过设计类似PN的结结构提供了提高能量存储性能的替代策略。
更新日期:2020-04-09
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