In this study, pure and doped ZnO thin films were prepared by sol–gel-based method and their electro-optical properties were investigated. For doping process, 1 at. % Al and Cu was incorporated in ZnO solution separately, and the thin films were prepared by dip coating method. The microstructure and morphology of calcined ZnO, Al-doped ZnO, and Cu-doped ZnO thin films were evaluated and compared by using various techniques X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), and field emission scanning electron microscopy (FESEM). Results showed that nanostructured ZnO thin films with cross-linked nanoparticles (NPs) were formed, and the size of ZnO NPs increased with the Al and Cu doping. It was also found that the substitution and interstitial of Al and Cu dopants caused the instability of ZnO crystal structure and generation of extra point defects. Photoluminescence (PL) properties indicated that the dopants incorporation causes the decline of the PL intensity and the shift of the localized energy states of electrons and holes to lower energy levels. Evaluation of thin films in the UV–Vis range demonstrated that the transparency increased (>94%), and the band gap decreased to 3.08 and 3.06 eV with the incorporation of Al and Cu into ZnO thin films, respectively. The electrical conductivity also improved by Al and Cu doping of ZnO TFs.

在这项研究中，通过溶胶-凝胶法制备了纯的和掺杂的ZnO薄膜，并研究了它们的电光性能。对于掺杂过程，为1 at。将％Al和Cu分别掺入ZnO溶液中，并通过浸涂法制备薄膜。通过X射线衍射（XRD），能量色散光谱（EDS）和场发射扫描电子显微镜（XS）对各种煅烧的ZnO，Al掺杂的ZnO和Cu掺杂的ZnO薄膜的微观结构和形貌进行了评估和比较。 FESEM）。结果表明，形成了具有交联纳米颗粒（NPs）的纳米结构ZnO薄膜，并且ZnO NPs的尺寸随着Al和Cu的掺杂而增加。还发现Al和Cu掺杂剂的取代和填隙导致了ZnO晶体结构的不稳定性和额外点缺陷的产生。光致发光（PL）特性表明掺入的掺杂剂会导致PL强度下降，并使电子和空穴的局部能态向较低能级转移。在UV-Vis范围内对薄膜的评估表明，随着将Al和Cu分别掺入ZnO薄膜中，透明性增加（> 94％），并且带隙减小至3.08和3.06 eV。ZnO TF的Al和Cu掺杂也改善了电导率。光致发光（PL）特性表明掺入的掺杂剂会导致PL强度下降以及电子和空穴的局部能态向较低能级移动。在UV-Vis范围内对薄膜的评估表明，随着将Al和Cu分别掺入ZnO薄膜中，透明性增加（> 94％），并且带隙减小至3.08和3.06 eV。ZnO TF的Al和Cu掺杂也改善了电导率。光致发光（PL）特性表明掺入的掺杂剂会导致PL强度下降以及电子和空穴的局部能态向较低能级移动。在UV-Vis范围内对薄膜的评估表明，随着将Al和Cu分别掺入ZnO薄膜中，透明性增加（> 94％），并且带隙减小至3.08和3.06 eV。ZnO TF的Al和Cu掺杂也改善了电导率。