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InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A
Journal of Crystal Growth ( IF 1.7 ) Pub Date : 2020-05-01 , DOI: 10.1016/j.jcrysgro.2020.125597
Vinay S. Kunnathully , Thomas Riedl , Alexander Trapp , Timo Langer , Dirk Reuter , Jörg K.N. Lindner

Abstract Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxation resulting from reduced dimensions. We explore this possibility in the InAs/GaAs(1 1 1)A system using a combination of nanosphere lithography and reactive ion etching of the GaAs(1 1 1)A substrate for nano-patterning of the substrate, yielding pillars with honeycomb and hexagonal arrangements and varied nearest neighbour distances. Substrate patterning is followed by MBE growth of InAs at temperatures of 150–350 °C and growth rates of 0.011 nm/s and 0.11 nm/s. InAs growth in the form of nano-islands on the pillar tops is achieved by lowering the adatom migration length by choosing a low growth temperature of 150 °C at the growth rate 0.011 nm/s. The choice of a higher growth rate of 0.11 nm/s results in higher InAs island nucleation and the formation of hillocks concentrated at the pillar bases due to reduced adatom migration length. A common feature of the growth morphology for all explored conditions is the formation of hillocks or pyramids with sometimes well-defined facets due to the presence of a concave surface curvature at the pillar bases acting as adatom sinks. This InAs growth at the pillar bases and between pillars is investigated in detail in dependence of MBE growth conditions.

中文翻译:

纳米柱图案化 GaAs (111)A 上的 InAs 异质外延

摘要 纳米图案衬底上的异质外延是一种通过利用衬底柔度和因尺寸减小而增强的弹性晶格弛豫来减少半导体异质界面缺陷的手段。我们在 InAs/GaAs(1 1 1)A 系统中探索了这种可能性,结合使用纳米球光刻和 GaAs(1 1 1)A 衬底的反应离子蚀刻,对衬底进行纳米图案化,产生具有蜂窝和六边形的柱子排列和不同的最近邻距离。衬底图案化之后是 InAs 在 150–350 °C 的温度和 0.011 nm/s 和 0.11 nm/s 的生长速率下的 MBE 生长。通过选择 150 °C 的低生长温度以 0.011 nm/s 的生长速率降低吸附原子迁移长度,可以在柱顶上以纳米岛形式生长 InAs。选择 0.11 nm/s 的更高生长速率会导致更高的 InAs 岛形核和由于吸附原子迁移长度减少而形成集中在柱基处的小丘。所有探索条件的生长形态的一个共同特征是形成小丘或金字塔,有时由于在充当吸附原子汇的柱基处存在凹面曲率而具有明确定义的小平面。根据 MBE 生长条件详细研究了柱基部和柱之间的这种 InAs 生长。所有探索条件的生长形态的一个共同特征是形成小丘或金字塔,有时由于在充当吸附原子汇的柱基处存在凹面曲率而具有明确定义的小平面。根据 MBE 生长条件详细研究了柱基部和柱之间的这种 InAs 生长。所有探索条件的生长形态的一个共同特征是形成小丘或金字塔,有时由于在充当吸附原子汇的柱基处存在凹面曲率而具有明确定义的小平面。根据 MBE 生长条件详细研究了柱基部和柱之间的这种 InAs 生长。
更新日期:2020-05-01
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