Abstract In this study, we characterize the GaAs solar cells grown under different conditions using a custom-built atmospheric-pressure hydride vapor-phase epitaxy (HVPE) reactor. Under typical HVPE growth involving the decomposition of AsH3 to Asx, the growth rate is considerably dependent on the temperature and is limited to ~10 μm/h at a low deposition temperature of 660 °C because of the large kinetic barrier of 198 kJ/mol. Herein, we grow GaAs with a considerably lower kinetic barrier of 7 kJ/mol by suppressing the decomposition of AsH3 in the reactor. Further, we grew GaAs solar cells at an extremely high growth rate of 120 μm/h using uncracked AsH3. However, the open-circuit voltage (VOC) was reduced from 1.0 V for the cells grown at 8 μm/h under typical growth using Asx to 0.95 V for the cells grown at 120 μm/h using hydride-enhanced growth. The reduction in VOC was attributed to the modulation of both the doping profile and the abruptness of heterointerfaces. A small amount of residual gases, which presents at the growth surface after the growth of the p-InGaP back surface field layer, is prominently incorporated during the growth of the p-GaAs base layer upon hydride-enhanced growth due to the fast kinetics.

中文翻译：

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氢化物气相外延在不同条件下生长的砷化镓太阳能电池的评估

摘要 在本研究中，我们使用定制的常压氢化物气相外延 (HVPE) 反应器表征在不同条件下生长的 GaAs 太阳能电池。在涉及 AsH3 分解为 Asx 的典型 HVPE 生长下，生长速率很大程度上取决于温度，并且由于 198 kJ/mol 的大动力学势垒，在 660 °C 的低沉积温度下生长速率限制在 ~10 μm/h . 在这里，我们通过抑制反应器中 AsH3 的分解来生长具有 7 kJ/mol 相当低的动力学势垒的 GaAs。此外，我们使用未裂化的 AsH3 以 120 μm/h 的极高生长速率生长 GaAs 太阳能电池。然而，在使用 Asx 的典型生长条件下，以 8 μm/h 生长的细胞的开路电压 (VOC) 从 1.0 V 降低到 0。对于使用氢化物​​增强生长以 120 μm/h 生长的细胞，电压为 95 V。VOC 的减少归因于掺杂分布和异质界面的突变的调制。由于快速动力学，在 p-InGaP 背表面场层生长后出现在生长表面的少量残留气体在氢化物增强生长的 p-GaAs 基层生长过程中显着掺入。