Abstract Manufacturing of III-V devices is a well-established technique but there is a strong demand to decrease production costs. MOVPE, as an industrial scale production method, suffers from long process times and high precursor costs. In this work, we focus on increasing the throughput of a close-coupled showerhead MOVPE reactor through higher growth rates, while simultaneously achieving higher precursor incorporation efficiencies. We demonstrate how reactor conditions influence the growth rate by comparing experimental results to predictions from theoretical modelling and reach growth rates up to 280 µm/h with 60% TMGa precursor efficiency. Furthermore, we investigate how the growth rate is influenced by growth temperature and reactor pressure, and how it in turn influences the GaAs surface roughness and growth rate uniformity. At a growth rate of 100 µm/h, a Hall carrier concentration as low as +2.4⋅1014 cm−3 was achieved.

中文翻译：

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GaAs 的 MOVPE 生长速度高达 280 µm/h

摘要 III-V 族器件的制造是一项成熟的技术，但强烈要求降低生产成本。MOVPE 作为一种工业规模的生产方法，存在加工时间长和前体成本高的问题。在这项工作中，我们专注于通过更高的增长率来增加紧密耦合的喷头 MOVPE 反应器的吞吐量，同时实现更高的前体掺入效率。我们通过将实验结果与理论模型的预测进行比较来展示反应器条件如何影响生长速率，并以 60% 的 TMGa 前驱体效率达到 280 µm/h 的生长速率。此外，我们研究了生长速度如何受生长温度和反应器压力的影响，以及它如何反过来影响 GaAs 表面粗糙度和生长速度均匀性。