Domain engineering in relaxor-PT single crystals are attracting much attention both as unique physical phenomena and for potential applications in various devices. Here, the effect of initial domain state on domain switching process was explored. Different domain switching processes were illustrated by in situ observation, and the dynamic processes of domain switching were obtained by using optical current analysis. We found the samples with different initial domain states have different domain switching processes. For the sample with wide stripe 90° domain, the polarization reversal is driven by a-domain nucleation, 90° domain wall movement and c-domain growth. While, in the sample with thin stripe 90° domain, the nucleation and growth of c-domain prevailed. The influences of the initial domain state on the domain structure evolution are discussed by current analysis. Our findings are of great significance in regulating the domain switching process to meet the demand of different devices.

Relaxer-PT单晶中的领域工程作为独特的物理现象以及在各种设备中的潜在应用都吸引了很多关注。在此，探讨了初始域状态对域切换过程的影响。通过现场观察说明了不同的域切换过程，并通过光电流分析获得了域切换的动态过程。我们发现具有不同初始域状态的样本具有不同的域切换过程。对于具有宽条纹90°磁畴的样品，极化反转是通过驱动一个-domain成核，90°磁畴壁移动和C-结构域的增长。而在具有90°细条纹区域的样品中，c的形核和生长域占优。当前的分析讨论了初始域状态对域结构演化的影响。我们的发现对于调节域切换过程以满足不同设备的需求具有重要意义。