Abstract Laser-doped boron selective emitters are an ideal candidate for enabling less emitter recombination, lower contact resistance and better blue response of efficient n-type silicon solar cells. However, the low boron concentration of the borosilicate glasses formed during boron diffusion processes and the implementation of ultraviolet lasers have hindered the commercialization of laser-doped boron selective emitters. In this contribution, separate BBr3 diffusion processes for green-laser-doped selective emitters are demonstrated. Laser doping processes were conducted between (1) borosilicate glass deposition and boron driving in and (2) post-oxidation, achieving the optimized laser doped selective emitter with the Rsheet,p+/Rsheet,p++ of 95.0 Ω/□/54.3 Ω/□, accompanying with the p+ profile of Nmax

中文翻译：

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用于高效 n 型硅太阳能电池的具有单独 BBr3 扩散工艺的绿色激光掺杂选择性发射器

摘要 激光掺杂硼选择性发射极是实现高效 n 型硅太阳能电池发射极复合更少、接触电阻更低和蓝色响应更好的理想候选材料。然而，在硼扩散过程中形成的硼硅玻璃的低硼浓度和紫外激光器的实施阻碍了激光掺杂硼选择性发射器的商业化。在这个贡献中，演示了用于绿色激光掺杂的选择性发射器的单独 BBr3 扩散过程。在（1）硼硅玻璃沉积和硼驱动和（2）后氧化之间进行激光掺杂工艺，实现了优化的激光掺杂选择性发射极，其 Rsheet,p+/Rsheet,p++ 为 95.0 Ω/□/54.3 Ω/□ , 伴随着 Nmax 的 p+ 分布