Abstract We employed hematoxylin as interfacial layer between the n- and p-type silicon substrate and cobalt (Co) metallic contact to obtain and compare Co/hematoxylin/n-Si and Co/hematoxylin/p-Si devices for a wide range temperature via current-voltage (I–V) characteristics. Furthermore, we studied structural and morphological properties of the hematoxylin thin film by x-ray diffractometer (XRD) and scanning electron microscope (SEM). The temperature range was changed from 100 K to 460 K via 20 K interval for I–V measurements. The Co/hematoxylin/n-Si and Co/hematoxylin/p-Si devices exhibited excellent rectifying behaviors for low temperatures, but rectifying ratio (RR) values decreased with increasing temperature at ±1 V bias. In addition, the devices showed thermal sensor or detector behavior because current values increased with increasing temperature at reverse biases. The Co/hematoxylin/p-Si device has better stability than Co/hematoxylin/n-Si device at reverse biases for the same temperature values according to stop leakage current with increasing voltage. In addition, the diode parameters such as barrier height, ideality factor and series resistance as well as interface states density were extracted from the I–V measurements and compared in details for various techniques such as thermionic emission theory, Norde and Cheung methods. The diode parameters of the both devices were affected from the temperature changes. The Co/hematoxylin/n-Si and Co/hematoxylin/p-Si devices are good candidate for rectifying and thermal sensing applications.

中文翻译：

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Co/苏木精/n-Si和Co/苏木精/p-Si器件作为宽温度范围整流器的比较

摘要 我们采用苏木精作为 n 型和 p 型硅衬底与钴 (Co) 金属触点之间的界面层，以获得和比较 Co/苏木精/n-Si 和 Co/苏木精/p-Si 器件在宽温度范围内通过电流-电压 (I-V) 特性。此外，我们通过 X 射线衍射仪 (XRD) 和扫描电子显微镜 (SEM) 研究了苏木精薄膜的结构和形态特性。对于 I-V 测量，温度范围通过 20 K 间隔从 100 K 变为 460 K。Co/苏木精/n-Si 和 Co/苏木精/p-Si 器件在低温下表现出优异的整流行为，但整流比 (RR) 值在 ±1 V 偏压下随温度升高而降低。此外，这些器件显示出热传感器或检测器的行为，因为在反向偏置时电流值随着温度的升高而增加。Co/苏木精/p-Si器件在相同温度值的反向偏压下具有比Co/苏木精/n-Si器件更好的稳定性，根据随着电压增加而停止漏电流。此外，从 I-V 测量中提取二极管参数，如势垒高度、理想因子和串联电阻以及界面态密度，并详细比较各种技术，如热电子发射理论、Norde 和 Cheung 方法。两种器件的二极管参数都受到温度变化的影响。Co/苏木精/n-Si 和 Co/苏木精/p-Si 器件是整流和热传感应用的理想选择。Co/苏木精/p-Si器件在相同温度值的反向偏压下具有比Co/苏木精/n-Si器件更好的稳定性，根据随着电压增加而停止漏电流。此外，从 I-V 测量中提取二极管参数，如势垒高度、理想因子和串联电阻以及界面态密度，并详细比较各种技术，如热电子发射理论、Norde 和 Cheung 方法。两种器件的二极管参数都受到温度变化的影响。Co/苏木精/n-Si 和 Co/苏木精/p-Si 器件是整流和热传感应用的理想选择。Co/苏木精/p-Si器件在相同温度值的反向偏压下具有比Co/苏木精/n-Si器件更好的稳定性，根据随着电压增加而停止漏电流。此外，从 I-V 测量中提取二极管参数，如势垒高度、理想因子和串联电阻以及界面态密度，并详细比较各种技术，如热电子发射理论、Norde 和 Cheung 方法。两种器件的二极管参数都受到温度变化的影响。Co/苏木精/n-Si 和 Co/苏木精/p-Si 器件是整流和热传感应用的理想选择。