A novel series of zinc complexes, [EtZn(dab)]₂ (1), [EtZn(damb)]₂ (2), [EtZn(damp)]₂ (3), and [EtZn(dadb)]₂ (4), were prepared via single-step substitution. Further, these were analyzed by nuclear magnetic resonance (NMR), Fourier transform infrared spectroscopy (FT-IR), elemental analysis, single crystal X-ray diffraction analysis, and thermogravimetric analysis (TGA). The X-ray crystallography analysis revealed that all complexes exist as dimeric structures with distorted tetrahedral geometry having zinc centers that are interconnected via μ₂-O bonding of the aminoalkoxy oxygen atom. TGA and thermal analysis of the complexes showed high volatilities and stabilities at sublimation temperatures of 70, 95, 90, and 105 °C at 0.5 Torr for the respective compounds. Precursor 3 was successfully used for ZnO thin film deposition by ALD. A growth rate per cycle (GPC) of 0.125 nm per cycle was obtained at 200 °C and XPS analysis confirmed the growth of highly pure ZnO films without carbon and nitrogen impurities, while XRD analysis revealed the deposition of reasonably crystalline films. Additionally, the high transmittance and wide bandgap of the films are suitable for optoelectronic applications.

中文翻译：

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原子层沉积制备ZnO薄膜用新型锌前驱体的合成与表征

一系列新型的锌络合物[EtZn（dab）] ₂（1），[EtZn（damb）] ₂（2），[EtZn（damp）] ₂（3）和[EtZn（dadb）] ₂（4）是通过单步替换制备的。此外，通过核磁共振（NMR），傅立叶变换红外光谱（FT-IR），元素分析，单晶X射线衍射分析和热重分析（TGA）对它们进行了分析。的X射线晶体学分析表明，所有的配合物作为具有扭曲的四面体具有几何中心的锌的二聚结构相互连接存在经由μ ₂氨基烷氧基氧原子的-O键。TGA和配合物的热分析表明，在70、95、90和105°C的升华温度下，每种化合物的0.5 Torr都具有很高的挥发性和稳定性。前驱体3通过ALD成功地用于ZnO薄膜沉积。在200°C时，每个周期的生长速率（GPC）为0.125 nm，XPS分析证实了无碳和氮杂质的高纯ZnO薄膜的生长，而XRD分析表明沉积了合理的结晶膜。另外，薄膜的高透射率和宽带隙适用于光电应用。